Radial excitation temperatures in argon-oxygen and argon-air inductively coupled plasmas

1990 ◽  
Vol 5 (1) ◽  
pp. 57 ◽  
Author(s):  
Izumi Ishii ◽  
Akbar Montaser
Keyword(s):  
Radial Excitation ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas

Excitation Temperatures and Electron Number Densities Experienced by Analyte Species in Inductively Coupled Plasmas with and without the Presence of an Easily Ionized Element

1977 ◽  
Vol 31 (2) ◽  
pp. 137-150 ◽  
Author(s):  
D. J. Kalnicky ◽  
V. A. Fassel ◽  
R. N. Kniseley
Keyword(s):  
Electron Density ◽  
Argon Plasma ◽  
Radial Excitation ◽  
Stark Broadening ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Density Distributions ◽  
Spatially Resolved ◽  
Density Values ◽  
Coupled Plasmas

Spatially resolved radial excitation temperatures and radial electron density distributions experienced by analyte species in the observation zone of 15 to 25 mm above the load coil of a toroidally shaped, inductively coupled argon plasma are presented and related to the analytical performance of these plasmas. A comparison of radial temperatures measured with support gas (Ar I) lines and with a typical analyte thermometric species (Pe I) at 15 mm above the load coil is given. Radial (Fe I) excitation temperatures obtained at three observation heights are compared for aerosol carrier flows of 1.0 and 1.3 liters/min. The addition of a large amount of an easily ionized element (6900 µg of Na per ml) did not significantly change Fe I excitation temperature distributions at the respective aerosol carrier flows and observation heights. A comparison of radial electron density distributions measured with Saha-Eggert ionization and with Stark broadening methods is given for an observation height of 15 mm above the load coil. The differences between electron density values obtained by these methods is discussed. The effect of addition of 6900 µg of Na per ml on Saha-Eggert electron density distributions at three observation heights is also discussed.

scholarly journals Erratum: Power Matching to Pulsed Inductively Coupled Plasmas [J. Appl. Phys. 127, 133302 (2020)]

2020 ◽  
Vol 128 (8) ◽  
pp. 089901
Author(s):  
Chenhui Qu ◽  
Steven J. Lanham ◽  
Steven C. Shannon ◽  
Sang Ki Nam ◽  
Mark J. Kushner
Keyword(s):  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Power Matching ◽  
Coupled Plasmas

Etching characteristics of ZnO thin films in chlorine-containing inductively coupled plasmas

2006 ◽  
Vol 83 (2) ◽  
pp. 328-335 ◽  
Author(s):  
S.W. Na ◽  
M.H. Shin ◽  
Y.M. Chung ◽  
J.G. Han ◽  
S.H. Jeung ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas

scholarly journals Nonlinear electromagnetic fields in 0.5 MHz inductively coupled plasmas

2003 ◽  
Vol 10 (4) ◽  
pp. 1146-1151 ◽  
Author(s):  
K. Ostrikov ◽  
E. Tsakadze ◽  
S. Xu ◽  
S. V. Vladimirov ◽  
R. Storer
Keyword(s):  
Electromagnetic Fields ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas

Inductively Coupled Plasmas

1974 ◽  
Vol 46 (13) ◽  
pp. 1155A-1162A ◽  
Author(s):  
Velmer A. Fassel ◽  
Richard N. Kniseley
Keyword(s):  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas

Comparison of Novel Chlorine, Bromine and Iodine Plasma Chemistries for Anisotropic Trench Etching In GaN, InN and Ain

1998 ◽  
Vol 512 ◽  
Author(s):  
Hyun Cho ◽  
T. Maeda ◽  
J. D. MacKenzie ◽  
S. M. Donovan ◽  
C. R. Abemathy ◽  
...  
Keyword(s):  
Pattern Transfer ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Etch Rates ◽  
Coupled Plasmas

ABSTRACTAnisotropic pattern transfer has been performed for GaN, InN and AIN in Cl2/Ar, BI3/Ar and BBr3/Ar Inductively Coupled Plasmas(ICP). Controlled etch rates in the range of 500–1500Å·min−1 are obtained for III-nitride materials in Cl2/Ar chemistry. Etch selectivities of 100:1 were achieved for InN over both GaN and AIN in the BI3 mixtures, while for BBr3 discharges values of 100:1 for InN over AIN and 25:1 for InN over GaN were measured.

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