Ultralow threshold long wavelength single-mode quantum dot VCSELs on GaAs substrates

Author(s):  
C. Moller
2000 ◽  
Vol 11 (4) ◽  
pp. 397-400 ◽  
Author(s):  
V M Ustinov ◽  
A E Zhukov ◽  
A R Kovsh ◽  
S S Mikhrin ◽  
N A Maleev ◽  
...  

2003 ◽  
Vol 48 (1) ◽  
pp. 131-132 ◽  
Author(s):  
E. Yu. Lundina ◽  
Yu. M. Shernyakov ◽  
M. V. Maksimov ◽  
I. N. Kayander ◽  
A. F. Tsatsul’nikov ◽  
...  

2002 ◽  
Vol 36 (11) ◽  
pp. 1315-1321 ◽  
Author(s):  
S. S. Mikhrin ◽  
A. E. Zhukov ◽  
A. R. Kovsh ◽  
N. A. Maleev ◽  
A. P. Vasil’ev ◽  
...  

Author(s):  
A. Vainionpaa ◽  
S. Suomalainen ◽  
O. Tengvall ◽  
T. Hakulinen ◽  
R. Herda ◽  
...  

2006 ◽  
Vol 89 (4) ◽  
pp. 041113 ◽  
Author(s):  
T. Kettler ◽  
L. Ya. Karachinsky ◽  
N. N. Ledentsov ◽  
V. A. Shchukin ◽  
G. Fiol ◽  
...  

2001 ◽  
Vol 15 (10n11) ◽  
pp. 1426-1442
Author(s):  
L. I. GLAZMAN ◽  
F. W. J. HEKKING ◽  
A. I. LARKIN

The Kondo effect in a quantum dot is discussed. In the standard Coulomb blockade setting, tunneling between the dot and the leads is weak, the number of electrons in the dot is well-defined and discrete; the Kondo effect may be considered in the framework of the conventional one-level Anderson impurity model. It turns out however, that the Kondo temperature TK in the case of weak tunneling is extremely low. In the opposite case of almost reflectionless single-mode junctions connecting the dot to the leads, the average charge of the dot is not discrete. Surprisingly, its spin may remain quantized: s=1/2 or s=0, depending (periodically) on the gate voltage. Such a "spin-charge separation" occurs because, unlike an Anderson impurity, a quantum dot carries a broad-band, dense spectrum of discrete levels. In the doublet state, the Kondo effect develops with a significantly enhanced TK. Like in the weak-tunneling regime, the enhanced TK exhibits strong mesoscopic fluctuations. The statistics of the fluctuations is universal, and related to the Porter-Thomas statistics of the wave function fluctuations.


2006 ◽  
Vol 939 ◽  
Author(s):  
Adrienne D. Stiff-Roberts ◽  
Abhishek Gupta ◽  
Zhiya Zhao

ABSTRACTThe motivation and distinct approach for this work is the use of intraband transitions within colloidal quantum dots for the detection of mid- (3-5 μm) and/or long-wave (8-14 μm) infrared light. The CdSe colloidal quantum dot/MEH-PPV conducting polymer nanocomposite material is well-suited for this application due to the ∼1.5 eV difference between the corresponding electron affinities. Therefore, CdSe colloidal quantum dots embedded in MEH-PPV should provide electron quantum confinement such that intraband transitions can occur in the conduction band. Further, it is desirable to deposit these nanocomposites on semiconductor substrates to enable charge transfer of photogenerated electron-hole pairs from the substrate to the nanocomposite. In this way, optoelectronic devices analogous to those achieved using Stranski-Krastanow quantum dots grown by epitaxy can be realized. To date, there have been relatively few investigations of colloidal quantum dot nanocomposites deposited on GaAs substrates. However, it is crucial to develop a better understanding of the optical properties of these hybrid material systems if such heterostructures are to be used for optoelectronic devices, such as infrared photodetectors. By depositing the nanocomposites on GaAs substrates featuring different doping characteristics and measuring the corresponding Fourier transform infrared absorbance, the feasibility of these intraband transitions is demonstrated at room temperature.


1999 ◽  
Vol 11 (11) ◽  
pp. 1345-1347 ◽  
Author(s):  
A.E. Zhukov ◽  
A.R. Kovsh ◽  
V.M. Ustinov ◽  
Yu.M. Shernyakov ◽  
S.S. Mikhrin ◽  
...  

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