Room temperature CW operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.23 μm grown by low-pressure metalorganic chemical vapour deposition

1981 ◽  
Vol 17 (17) ◽  
pp. 597 ◽  
Author(s):  
M. Razeghi ◽  
J.P. Hirtz ◽  
P. Hirtz ◽  
J.P. Larivain ◽  
R. Bondeau ◽  
...  
Sign in / Sign up

Export Citation Format

Share Document