Erratum: GaAs/AlGaAs multiple quantum well pin diodes grown by selective area epitaxy

1988 ◽  
Vol 24 (17) ◽  
pp. 1117
Author(s):  
D.A. Roberts ◽  
J.P.R. David ◽  
G. Hill ◽  
P.A. Houston ◽  
M.A. Pate ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Pin Diodes ◽  
Selective Area Epitaxy ◽  
Selective Area

GaAs/AlGaAs multiple quantum well pin diodes grown by selective area epitaxy

1988 ◽  
Vol 24 (14) ◽  
pp. 896
Author(s):  
D.A. Roberts ◽  
J.P.R. David ◽  
G. Hill ◽  
P.A. Houston ◽  
M.A. Pate ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Pin Diodes ◽  
Selective Area Epitaxy ◽  
Selective Area

Mechanisms in embedded selective epitaxy and overgrowth of an integrated laser/modulator quantum well structure using MOMBE and MOVPE

2000 ◽  
Vol 648 ◽  
Author(s):  
Philipp Kröner ◽  
Horst Baumeister ◽  
Roland Gessner ◽  
Josef Rieger ◽  
Michael Schier ◽  
...  
Keyword(s):  
Quantum Well ◽  
Growth Parameters ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Selective Area Epitaxy ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic ◽  
Modulator Structure ◽  
Butt Coupling

AbstractLateral integration of optoelectronic devices comprising strained multiple quantum well (MQW) structures can most successfully be accomplished by selective area epitaxy using metal organic molecular beam epitaxy (MOMBE). We optimized the growth parameters with respect to a planar butt coupling and sharp, flat MQW interfaces in an integrated MQW laser / MQW modulator structure. Defect generation in metal organic vapor phase epitaxy (MOVPE) overgrown cladding layers is analyzed and shown to contain information about the quality of the buried butt coupling. A ridge waveguide structure has successfully been fabricated from an optimized integrated laser / modulator structure.

Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN Substrates

2001 ◽  
Vol 40 (Part 2, No. 9A/B) ◽  
pp. L925-L927 ◽  
Author(s):  
Masaru Kuramoto ◽  
Akitaka Kimura ◽  
Chiaki Sasaoka ◽  
Takahiro Arakida ◽  
Masaaki Nido ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Selective Area ◽  
Multiple Quantum Well Laser

scholarly journals Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates

2000 ◽  
Vol 76 (3) ◽  
pp. 273-275 ◽  
Author(s):  
J. W. Yang ◽  
A. Lunev ◽  
G. Simin ◽  
A. Chitnis ◽  
M. Shatalov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Silicon Substrates ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Selective Area
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