Long wavelength broadband normal incidence AlAs/AlGaAs X-valley quantum well infra-red phototector

1993 ◽  
Vol 29 (2) ◽  
pp. 213 ◽  
Author(s):  
Y. Zhang ◽  
N. Baruch ◽  
W.I. Wang
Keyword(s):  
Quantum Well ◽  
Normal Incidence ◽  
Long Wavelength ◽  
Infra Red

Normal incidence multiple spectra type-II AlAs/AlGaAs quantum well infra-red detector

1992 ◽  
Vol 28 (15) ◽  
pp. 1468 ◽  
Author(s):  
L.S. Yu ◽  
S.S. Li ◽  
P. Ho
Keyword(s):  
Quantum Well ◽  
Normal Incidence ◽  
Type Ii ◽  
Infra Red

P-Type Quantum Well Infrared Photodetectors Grown by OMVPE

1991 ◽  
Vol 240 ◽  
Author(s):  
W. S. Hobson ◽  
A. Zussman ◽  
J. De Jong ◽  
B. F. Levine
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Cutoff Wavelength ◽  
Peak Wavelength ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetectors ◽  
Intersubband Absorption ◽  
P Type

ABSTRACTWe report on the growth and fabrication of p-doped long wavelength GaAs/AlxGa1−x As quantum well infrared photodetectors (QWIP) grown by organometallic vapor phase epitaxy. The operation of these devices is based on the photocurrent induced through valence band intersubband absorption by holes and, unlike n-doped QWIPs, can utilize normal incidence illumination. Carbon and zinc were used as the p-type dopants in a low-pressure (30 Torr) vertical-geometry reactor. The Zn-doped QWIP consisted of fifty periods of 48 nm-thick undoped Al0.36Ga0.64As barriers and nominally 4 nm-thick doped GaAs quantum wells. Using normal incidence, a quantum efficiency of η = 2.5% and a detectivity of at 77K were obtained for a peak wavelength λp = 6.8 μm and a cutoff wavelength λ∫ =7.6 μm. The C-doped QWIP had 54 nm-thick Al0.31Ga0.69As barriers and exhibited a normal incidence These initial studies indicate the superiority of carbon to zinc as the p-type dopant for these structures. The detectivity of the C-doped QWIPs is about four times less than n-doped QWIPs for the same λp but have the advantage of utilizing normal incidence illumination.

GaAs/AlGaAs quantum-well, long-wavelength infra-red (LWIR) detector with a detectivity comparable to HgCdTe

1988 ◽  
Vol 24 (12) ◽  
pp. 747 ◽  
Author(s):  
B.F. Levine ◽  
C.G. Bethea ◽  
G. Hasnain ◽  
J. Walker ◽  
R.J. Malik
Keyword(s):  
Quantum Well ◽  
Long Wavelength ◽  
Infra Red

Stabilisation of Hg1-xCdxTe:Hg1-yCdyTex ≠ y) Heterointerfaces and Applications in Infra Red Devices

1990 ◽  
Vol 216 ◽  
Author(s):  
Paul A. Clifton ◽  
Paul D. Brown
Keyword(s):  
Barrier Layer ◽  
Epitaxial Layers ◽  
Long Wavelength ◽  
Long Term Stability ◽  
Novel Approach ◽  
Infra Red ◽  
Passivation Layers ◽  
Cdte Buffer ◽  
Initial Results

ABSTRACTThe interface between Hg1-xCdxTe(0 ≦ x ≦ 1) and Hg1-yCdyTe(0 ≦ y ≦ 1) epitaxial layers of different composition (x ≠ y) is unstable with regard to the intermixing of the Hg and Cd cations within the Group II sublattice. This phenomenon may give rise to long-term stability problems in HgTe-(Hg,Cd)Te superlattices and composition grading between (Hg,Cd)Te absorber layers and CdTe buffer or passivation layers in epitaxial infra red detectors. In this paper, a novel approach to the inhibition of interdiffusion in these systems is discussed. This involves the growth of an intervening ZnTe barrier layer at the heterointerface between two (Hg,Cd)Te layers. Initial results are presented which indicate the effectiveness of this technique in reducing interdiffusion in an experimental heterostructure grown by MOVPE. Some possible applications in a variety of HgTe-based long wavelength devices are discussed.

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