Room-temperature continuous-wave operation of GaInNAs/GaAs laser diode

1996 ◽  
Vol 32 (24) ◽  
pp. 2244 ◽  
Author(s):  
M. Kondow ◽  
S. Natatsuka ◽  
T. Kitatani ◽  
Y. Yazawa ◽  
M. Okai
2021 ◽  
Vol 42 (11) ◽  
pp. 112801
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Ping Chen ◽  
Jing Yang ◽  
...  

Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.


2008 ◽  
Vol 25 (4) ◽  
pp. 1281-1283 ◽  
Author(s):  
Zhang Li-Qun ◽  
Zhang Shu-Ming ◽  
Yang Hui ◽  
Cao Qing ◽  
Ji Lian ◽  
...  

1997 ◽  
Vol 175-176 ◽  
pp. 637-641 ◽  
Author(s):  
Moon-Deock Kim ◽  
Bong-Jin Kim ◽  
Min-Hyon Jeon ◽  
Jeong-Keun Ji ◽  
Sang-Dong Lee ◽  
...  

1998 ◽  
Vol 34 (15) ◽  
pp. 1494 ◽  
Author(s):  
T. Kobayashi ◽  
F. Nakamura ◽  
K. Naganuma ◽  
T. Tojyo ◽  
H. Nakajima ◽  
...  

1993 ◽  
Vol 29 (25) ◽  
pp. 2194 ◽  
Author(s):  
N. Nakayama ◽  
S. Itoh ◽  
H. Okuyama ◽  
M. Ozawa ◽  
T. Ohata ◽  
...  

2012 ◽  
Vol 101 (24) ◽  
pp. 241110 ◽  
Author(s):  
N. Bandyopadhyay ◽  
Y. Bai ◽  
S. Tsao ◽  
S. Nida ◽  
S. Slivken ◽  
...  

2009 ◽  
Vol 6 (12) ◽  
pp. 847-849 ◽  
Author(s):  
X.M. Duan ◽  
B.Q. Yao ◽  
Y.L. Ju ◽  
Y.Z. Wang ◽  
G.J. Zhao

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