Continuous-wave operation of a room-temperature, diode-laser-pumped, 946-nm Nd:YAG laser

1987 ◽  
Vol 12 (10) ◽  
pp. 809 ◽  
Author(s):  
T. Y. Fan ◽  
Robert L. Byer

Previous observations of optical bistability in nonlinear etalons of ZnS, CuCl and GaAs are summarized. Emphasis is placed upon recent results in GaAs: similar room-temperature optical bistability at powers under 10 mW in bulk and multiple quantum-well etalons; room-temperature bistability achieved with a diode laser as a light source; NOR and other logic operations; optical fibre signal regeneration and continuous wave operation.


2004 ◽  
Vol 16 (5) ◽  
pp. 1253-1255 ◽  
Author(s):  
M. Garcia ◽  
A. Salhi ◽  
A. Perona ◽  
Y. Rouillard ◽  
C. Sirtori ◽  
...  

1999 ◽  
Vol 11 (11) ◽  
pp. 1345-1347 ◽  
Author(s):  
A.E. Zhukov ◽  
A.R. Kovsh ◽  
V.M. Ustinov ◽  
Yu.M. Shernyakov ◽  
S.S. Mikhrin ◽  
...  

2021 ◽  
Vol 42 (11) ◽  
pp. 112801
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Ping Chen ◽  
Jing Yang ◽  
...  

Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.


2012 ◽  
Vol 101 (24) ◽  
pp. 241110 ◽  
Author(s):  
N. Bandyopadhyay ◽  
Y. Bai ◽  
S. Tsao ◽  
S. Nida ◽  
S. Slivken ◽  
...  

2009 ◽  
Vol 6 (12) ◽  
pp. 847-849 ◽  
Author(s):  
X.M. Duan ◽  
B.Q. Yao ◽  
Y.L. Ju ◽  
Y.Z. Wang ◽  
G.J. Zhao

2008 ◽  
Vol 25 (4) ◽  
pp. 1281-1283 ◽  
Author(s):  
Zhang Li-Qun ◽  
Zhang Shu-Ming ◽  
Yang Hui ◽  
Cao Qing ◽  
Ji Lian ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document