High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

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Fabrication and characterization of gallium nitride thin film deposited on a sapphire substrate for photoelectrochemical water splitting applications

Optik ◽

10.1016/j.ijleo.2020.165410 ◽

2021 ◽

Vol 226 ◽

pp. 165410

Author(s):

Yash Pal ◽

M. Anthony Raja ◽

M. Madhumitha ◽

A. Nikita ◽

A. Neethu

Keyword(s):

Thin Film ◽

Gallium Nitride ◽

Water Splitting ◽

Sapphire Substrate ◽

Photoelectrochemical Water Splitting ◽

Fabrication And Characterization

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Multi-Finger High Power Gallium Nitride Based High Electron Mobility Transistors

2019 6th International Conference on Electrical and Electronics Engineering (ICEEE) ◽

10.1109/iceee2019.2019.00046 ◽

2019 ◽

Author(s):

Jaya Jha ◽

Sreenadh Surapaneni ◽

Akhil Kumar S. ◽

Swaroop Ganguly ◽

Dipankar Saha

Keyword(s):

Gallium Nitride ◽

High Power ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Effects of surface treatment for sapphire substrate on gallium nitride films

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2008.09.064 ◽

2009 ◽

Vol 476 (1-2) ◽

pp. 629-634 ◽

Cited By ~ 15

Author(s):

Dongsheng Peng ◽

Yuchun Feng ◽

Hanben Niu

Keyword(s):

Gallium Nitride ◽

Surface Treatment ◽

Sapphire Substrate

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A manufacturable, high power RF Gallium Nitride (GaN) technology portfolio with 65V operation and enhanced linearity

2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2011) ◽

10.1109/comcas.2011.6105956 ◽

2011 ◽

Cited By ~ 3

Author(s):

J. B. Shealy ◽

R. Vetury ◽

B. Trabert ◽

D. Runton

Keyword(s):

Gallium Nitride ◽

High Power

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Holographic lithography for grating coupler fabrication in gallium nitride grown on sapphire substrate

Proceedings of 2005 International Students and Young Scientists Workshop Photonics and Microsystems, 2005. ◽

10.1109/stysw.2005.1617790 ◽

2006 ◽

Cited By ~ 1

Author(s):

R. Dylewicz ◽

S. Patela ◽

R. Paszkiewicz ◽

M. Tlaczala ◽

S. Bartkiewicz ◽

...

Keyword(s):

Gallium Nitride ◽

Sapphire Substrate ◽

Holographic Lithography ◽

Grating Coupler

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A Study of MOCVD-Grown Gallium Nitride Nucleation Layers on Sapphire

MRS Proceedings ◽

10.1557/proc-280-355 ◽

1992 ◽

Vol 280 ◽

Cited By ~ 1

Author(s):

A. Estes Wickenden ◽

D. K. Wickenden ◽

T. J. Kistenmacher ◽

S. A. Ecelberger ◽

T. O. Poehler

Keyword(s):

Gallium Nitride ◽

Sapphire Substrate ◽

Low Temperatures ◽

Carrier Gas ◽

Mocvd Reactor ◽

Nucleation Sites

ABSTRACTNucleation layers of GaN have been deposited in an MOCVD reactor on (0001) sapphire, over a range of temperatures and layer thicknesses, using either N2 or H2 carrier gas. The layers have been found to be continuous, textured films as deposited at low temperatures (600°C), but to reorder upon annealing, segregating into nucleation sites which exhibit the normal heteroepitaxial relationship with the sapphire substrate.

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