Holographic lithography for grating coupler fabrication in gallium nitride grown on sapphire substrate

2006 ◽  
Author(s):  
R. Dylewicz ◽  
S. Patela ◽  
R. Paszkiewicz ◽  
M. Tlaczala ◽  
S. Bartkiewicz ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Sapphire Substrate ◽  
Holographic Lithography ◽  
Grating Coupler

About holographic lithography for grating coupler fabrication in gallium nitride grown by MOVPE on sapphire substrate

2005 ◽  
Author(s):  
R. Dylewicz ◽  
S. Patela ◽  
R. Paszkiewicz ◽  
M. Tlaczala ◽  
S. Bartkiewicz ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Sapphire Substrate ◽  
Holographic Lithography ◽  
Grating Coupler

Effects of surface treatment for sapphire substrate on gallium nitride films

2009 ◽  
Vol 476 (1-2) ◽  
pp. 629-634 ◽  
Author(s):  
Dongsheng Peng ◽  
Yuchun Feng ◽  
Hanben Niu
Keyword(s):  
Gallium Nitride ◽  
Surface Treatment ◽  
Sapphire Substrate

A Study of MOCVD-Grown Gallium Nitride Nucleation Layers on Sapphire

1992 ◽  
Vol 280 ◽  
Author(s):  
A. Estes Wickenden ◽  
D. K. Wickenden ◽  
T. J. Kistenmacher ◽  
S. A. Ecelberger ◽  
T. O. Poehler
Keyword(s):  
Gallium Nitride ◽  
Sapphire Substrate ◽  
Low Temperatures ◽  
Carrier Gas ◽  
Mocvd Reactor ◽  
Nucleation Sites

ABSTRACTNucleation layers of GaN have been deposited in an MOCVD reactor on (0001) sapphire, over a range of temperatures and layer thicknesses, using either N2 or H2 carrier gas. The layers have been found to be continuous, textured films as deposited at low temperatures (600°C), but to reorder upon annealing, segregating into nucleation sites which exhibit the normal heteroepitaxial relationship with the sapphire substrate.

High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

2005 ◽  
Vol 41 (1) ◽  
pp. 46 ◽  
Author(s):  
M. Werquin ◽  
C. Gaquiére ◽  
Y. Guhel ◽  
N. Vellas ◽  
D. Theron ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Sapphire Substrate ◽  
High Power

Gallium nitride-based light-emitting diodes with embedded air voids grown on Ar-implanted AlN/sapphire substrate

2012 ◽  
Vol 101 (15) ◽  
pp. 151103 ◽  
Author(s):  
Jinn-Kong Sheu ◽  
Shang-Ju Tu ◽  
Yu-Hsiang Yeh ◽  
Ming-Lun Lee ◽  
Wei-Chih Lai
Keyword(s):  
Gallium Nitride ◽  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Air Voids
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