Threshold voltage shift compensated active pixel sensor array for digital X-ray imaging in a-Si technology

2005 ◽  
Vol 41 (7) ◽  
pp. 411 ◽  
Author(s):  
N. Safavian ◽  
J. Lai ◽  
J. Rowlands ◽  
A. Nathan
RSC Advances ◽  
2019 ◽  
Vol 9 (36) ◽  
pp. 20865-20870 ◽  
Author(s):  
Dong-Gyu Kim ◽  
Jong-Un Kim ◽  
Jun-Sun Lee ◽  
Kwon-Shik Park ◽  
Youn-Gyoung Chang ◽  
...  

We studied the effect of X-ray irradiation on the negative threshold voltage shift of bottom-gate a-IGZO TFT. Based on spectroscopic analyses, we found that this behavior was caused by hydrogen incorporation and oxygen vacancy ionization.


2019 ◽  
Vol 34 (9) ◽  
pp. 095012 ◽  
Author(s):  
Ya-Hsiang Tai ◽  
Shan Yeh ◽  
Po-Chun Chan ◽  
Yi-Shen Li ◽  
Shih-Hsuan Huang ◽  
...  

2011 ◽  
Vol 6 (03) ◽  
pp. C03002-C03002
Author(s):  
J Sabadell ◽  
R Figueras ◽  
J M Margarit ◽  
E Martín ◽  
L Terès ◽  
...  

Author(s):  
Hoon Jang ◽  
So Eun Park ◽  
Sun Jae Hwang ◽  
Chee Hong Choi ◽  
Joon Hwang

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