This paper describes the analytical modeling and simulation of Triple Material Double Gate Metal Oxide Semiconductor Field Effect Transistor (TMDG MOSFET) with no junctions. Three kind of gate materials with different work function values over the channel helps to improve the ON current and to form a barrier in the channel helps to reduce OFF current. It has been found from the obtained results that the OFF current or leakage current of the device is exactly low (IOFF =10-11 A) which is fit for low power applications. Also, the extracted value of ION current (10-3 A) has proved that there is a remarkable improvement with decreasing device dimensions. The overall gate length (L), work functions of gate materials, oxide thickness (tox), silicon thickness (tsi) and doping concentration (Nd) are optimized at 60nm, 4.8eV, 4.6eV, 4.4eV, 1nm, 10nm and 1019 cm-3 respectively. The 2-D Poisson equation has been solved by using parabolic approximation technique to obtain the potential distribution function in the channel. Based on this expression, analytical models of the lateral electric field, subthreshold slope and drain current for Junctionless Triple Material Double Gate Metal oxide semiconductor Field Effect Transistor (JL TMDG MOSFET) were derived. Finally, the validity of the proposed analytical model is compared with numerical solution simulation data results which are obtained by using TCAD device simulator.
