Avoidance of RF plasma extraction transit-time oscillations using 3-D EMC simulation: chances and limits

2006 ◽  
Vol 153 (1) ◽  
pp. 16 ◽  
Author(s):  
R. Siemieniec ◽  
P. Mourick ◽  
M. Netzel
Keyword(s):  
Transit Time ◽  
Rf Plasma ◽  
Plasma Extraction

Plasma extraction transit time oscillations in bipolar power devices

2002 ◽  
Vol 46 (1) ◽  
pp. 133-138 ◽  
Author(s):  
Bernd Gutsmann ◽  
Paul Mourick ◽  
Dieter Silber
Keyword(s):  
Transit Time ◽  
Power Devices ◽  
Plasma Extraction

Characterization of homoepitaxial diamond films by Electron microscopy

1991 ◽  
Vol 49 ◽  
pp. 880-881
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Large Degree ◽  
Rf Plasma ◽  
Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

Cerebral vascular mean transit time determined by PET and DSC-MRI

2005 ◽  
Vol 25 (1_suppl) ◽  
pp. S676-S676
Author(s):  
Masanobu Ibaraki ◽  
Hiroshi Ito ◽  
Eku Shimosegawa ◽  
Hideto Toyoshima ◽  
Keiichi Ishigame ◽  
...  
Keyword(s):  
Transit Time ◽  
Mean Transit Time ◽  
Dsc Mri ◽  
Cerebral Vascular

Transit-time effects in saturated absorption resonances

1986 ◽  
Vol 47 (12) ◽  
pp. 2025-2039 ◽  
Author(s):  
A. Titov ◽  
Yu. Malyshev ◽  
Yu. Rastorguev
Keyword(s):  
Transit Time ◽  
Time Effects ◽  
Saturated Absorption
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