Molybdenum disulfide–boron nitride junctionless tunnel effect transistor

Advanced Technologies for Next Generation Integrated Circuits ◽

10.1049/pbcs049e_ch12 ◽

2020 ◽

pp. 279-298

Author(s):

Ashok Srivastava ◽

Muhammad Shamiul Fahad

Keyword(s):

Boron Nitride ◽

Molybdenum Disulfide ◽

Tunnel Effect ◽

Effect Transistor

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Chemically Functionalized 2D/2D Hexagonal Boron Nitride/Molybdenum Disulfide Heterostructure for Enhancement of Lubrication Properties

Applied Surface Science ◽

10.1016/j.apsusc.2021.152157 ◽

2021 ◽

pp. 152157

Author(s):

Sangita Kumari ◽

Ajay Chouhan ◽

LN Siva Kumar Konathala ◽

Om P. Sharma ◽

Siddharth S. Ray ◽

...

Keyword(s):

Boron Nitride ◽

Molybdenum Disulfide ◽

Hexagonal Boron Nitride ◽

Lubrication Properties

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Optimization of ON current in multilayer Molybdenum Disulfide (MoS2) based tunnel field effect transistor

2015 IEEE 58th International Midwest Symposium on Circuits and Systems (MWSCAS) ◽

10.1109/mwscas.2015.7282099 ◽

2015 ◽

Author(s):

Muhammad Sanaullah ◽

Masud H Chowdhury

Keyword(s):

Molybdenum Disulfide ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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An ultrasensitive detection of miRNA-155 in breast cancer via direct hybridization assay using two-dimensional molybdenum disulfide field-effect transistor biosensor

Biosensors and Bioelectronics ◽

10.1016/j.bios.2018.01.009 ◽

2018 ◽

Vol 105 ◽

pp. 6-13 ◽

Author(s):

Samira Mansouri Majd ◽

Abdollah Salimi ◽

Foad Ghasemi

Keyword(s):

Breast Cancer ◽

Molybdenum Disulfide ◽

Field Effect ◽

Field Effect Transistor ◽

Hybridization Assay ◽

Ultrasensitive Detection ◽

Two Dimensional ◽

Effect Transistor ◽

Direct Hybridization

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Electrochemical Corrosion Studies of Molybdenum Disulfide, Boron Nitride, and Tungsten Disulfide– Coated Stainless Steel

ECS Meeting Abstracts ◽

10.1149/ma2018-01/14/1079 ◽

2018 ◽

Keyword(s):

Stainless Steel ◽

Boron Nitride ◽

Molybdenum Disulfide ◽

Electrochemical Corrosion ◽

Tungsten Disulfide ◽

Corrosion Studies ◽

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Preferential adsorption of compounds with long methylene chains on cast iron, graphite, boron nitride, and molybdenum disulfide

Wear ◽

10.1016/0043-1648(66)90063-9 ◽

1966 ◽

Vol 9 (5) ◽

pp. 404

Keyword(s):

Cast Iron ◽

Boron Nitride ◽

Molybdenum Disulfide ◽

Preferential Adsorption

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Ultrasensitive Mercury Ion Detection Using DNA-Functionalized Molybdenum Disulfide Nanosheet/Gold Nanoparticle Hybrid Field-Effect Transistor Device

ACS Sensors ◽

10.1021/acssensors.5b00241 ◽

2016 ◽

Vol 1 (3) ◽

pp. 295-302 ◽

Author(s):

Guihua Zhou ◽

Jingbo Chang ◽

Haihui Pu ◽

Keying Shi ◽

Shun Mao ◽

...

Keyword(s):

Gold Nanoparticle ◽

Molybdenum Disulfide ◽

Field Effect ◽

Field Effect Transistor ◽

Mercury Ion ◽

Ion Detection ◽

Effect Transistor ◽

Mercury Ion Detection

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High-Performance Current Saturating Graphene Field-Effect Transistor With Hexagonal Boron Nitride Dielectric on Flexible Polymeric Substrates

IEEE Electron Device Letters ◽

10.1109/led.2012.2233707 ◽

2013 ◽

Vol 34 (2) ◽

pp. 172-174 ◽

Author(s):

Jongho Lee ◽

Tae-Jun Ha ◽

Kristen N. Parrish ◽

Sk. Fahad Chowdhury ◽

Li Tao ◽

...

Keyword(s):

Boron Nitride ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Hexagonal Boron Nitride ◽

Graphene Field Effect Transistor ◽

Effect Transistor ◽

Polymeric Substrates

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Origin of Improved Optical Quality of Monolayer Molybdenum Disulfide Grown on Hexagonal Boron Nitride Substrate

Small ◽

10.1002/smll.201502141 ◽

2015 ◽

Vol 12 (2) ◽

pp. 198-203 ◽

Author(s):

Yi Wan ◽

Hui Zhang ◽

Wei Wang ◽

Bowen Sheng ◽

Kun Zhang ◽

...

Keyword(s):

Boron Nitride ◽

Molybdenum Disulfide ◽

Hexagonal Boron Nitride ◽

Optical Quality

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Oscillatory motion in layered materials: graphene, boron nitride, and molybdenum disulfide

Nanotechnology ◽

10.1088/0957-4484/26/16/165701 ◽

2015 ◽

Vol 26 (16) ◽

pp. 165701 ◽

Author(s):

Zhijiang Ye ◽

Alberto Otero-de-la-Roza ◽

Erin R Johnson ◽

Ashlie Martini

Keyword(s):

Boron Nitride ◽

Molybdenum Disulfide ◽

Layered Materials ◽

Oscillatory Motion

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Strain Gated Bilayer Molybdenum Disulfide Field Effect Transistor with Edge Contacts

Scientific Reports ◽

10.1038/srep41593 ◽

2017 ◽

Vol 7 (1) ◽

Author(s):

Yu Chai ◽

Shanshan Su ◽

Dong Yan ◽

Mihrimah Ozkan ◽

Roger Lake ◽

...

Keyword(s):

Molybdenum Disulfide ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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