Magnetic energy distribution in polycrystalline sputtered CoCr magnetic thin films

2008 ◽  
Vol 42 (2) ◽  
pp. 125-128
Author(s):  
J. F. Al-Sharab ◽  
J. E. Wittig ◽  
G. Bertero ◽  
T. Yamashita ◽  
J. Bentley ◽  
...  
2007 ◽  
Vol 1026 ◽  
Author(s):  
Jafar F. Al-Sharab ◽  
James E Wittig ◽  
James Bentley ◽  
Neal Evans ◽  
Gerardo Bertero ◽  
...  

AbstractMagnetic thin films of Co80Cr16Ta4 were sputtered onto identical CrMo seed-layers at −200 V bias and 3 different substrate temperatures (150, 200, and 250°C). Energy-filtered transmission electron microscopy (EFTEM) was performed to analyze Cr levels at the grain boundaries as well as inside the grains. These quantitative Cr measurements were used to estimate the local values of magnetocrystalline anisotropy (Ku) and, together with grain size distributions, calculate the product of Ku and the grain volume (KuV), a quantity which is a measure of thermal stability. The results show that the coercivity as well as the percentage of stable grains increased with increasing substrate temperature. The increase in the number of stable grains is produced by the enhancement in the Ku value from Cr depletion of the grain interiors and the magnetic decoupling between the grains from Cr grain boundary segregation.


Author(s):  
L. Tang ◽  
G. Thomas ◽  
M. R. Khan ◽  
S. L. Duan

Cr thin films are often used as underlayers for Co alloy magnetic thin films, such as Co1, CoNi2, and CoNiCr3, for high density longitudinal magnetic recording. It is belived that the role of the Cr underlayer is to control the growth and texture of the Co alloy magnetic thin films, and, then, to increase the in plane coercivity of the films. Although many epitaxial relationship between the Cr underlayer and the magnetic films, such as ﹛1010﹜Co/ {110﹜Cr4, ﹛2110﹜Co/ ﹛001﹜Cr5, ﹛0002﹜Co/﹛110﹜Cr6, have been suggested and appear to be related to the Cr thickness, the texture of the Cr underlayer itself is still not understood very well. In this study, the texture of a 2000 Å thick Cr underlayer on Nip/Al substrate for thin films of (Co75Ni25)1-xTix dc-sputtered with - 200 V substrate bias is investigated by electron microscopy.


2000 ◽  
Vol 454-456 ◽  
pp. 723-728 ◽  
Author(s):  
H. Magnan ◽  
P. Le Fèvre ◽  
A. Midoir ◽  
D. Chandesris ◽  
H. Jaffrès ◽  
...  

2010 ◽  
Vol 46 (2) ◽  
pp. 630-633 ◽  
Author(s):  
Zung-Hang Wei ◽  
Chi-Kuen Lo ◽  
Da-Ren Liu ◽  
Yi-Ping Hsieh ◽  
Yun-Ruei Lee ◽  
...  

2003 ◽  
Vol 91 (9) ◽  
Author(s):  
Andreas Moser ◽  
Andreas Berger ◽  
David T. Margulies ◽  
Eric E. Fullerton

2001 ◽  
Vol 138 (1) ◽  
pp. 77-83 ◽  
Author(s):  
N. Martin ◽  
A.M.E. Santo ◽  
R. Sanjinés ◽  
F. Lévy

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Gui-fang Li ◽  
Shibin Liu ◽  
Shanglin Yang ◽  
Yongqian Du

We prepared magnetic thin films Ni81Fe19on single-crystal Si(001) substrates via single graphene layer through magnetron sputtering for Ni81Fe19and chemical vapor deposition for graphene. Structural investigation showed that crystal quality of Ni81Fe19thin films was significantly improved with insertion of graphene layer compared with that directly grown on Si(001) substrate. Furthermore, saturation magnetization of Ni81Fe19/graphene/Si(001) heterostructure increased to 477 emu/cm3with annealing temperatureTa=400°C, which is much higher than values of Ni81Fe19/Si(001) heterostructures withTaranging from 200°C to 400°C.


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