Structural and Magnetic Properties of Ni81Fe19Thin Film Grown on Si(001) Substrate via Single Graphene Layer

We prepared magnetic thin films Ni81Fe19on single-crystal Si(001) substrates via single graphene layer through magnetron sputtering for Ni81Fe19and chemical vapor deposition for graphene. Structural investigation showed that crystal quality of Ni81Fe19thin films was significantly improved with insertion of graphene layer compared with that directly grown on Si(001) substrate. Furthermore, saturation magnetization of Ni81Fe19/graphene/Si(001) heterostructure increased to 477 emu/cm3with annealing temperatureTa=400°C, which is much higher than values of Ni81Fe19/Si(001) heterostructures withTaranging from 200°C to 400°C.

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Structural and magnetic properties of thin films of BaFeO3-δ deposited by pulsed injection metal-organic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.4729269 ◽

2012 ◽

Vol 111 (11) ◽

pp. 113923 ◽

Cited By ~ 7

Author(s):

B. Ribeiro ◽

R. P. Borges ◽

R. C. da Silva ◽

N. Franco ◽

P. Ferreira ◽

...

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Pulsed Injection ◽

Structural And Magnetic Properties ◽

Organic Chemical Vapor Deposition

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Experimental Study of the Effect of Precursor Composition On the Microstructure of Gallium Nitride Thin Films Grown by the MOCVD Process

Journal of Heat Transfer ◽

10.1115/1.4051672 ◽

2021 ◽

Author(s):

Omar D. Jumaah ◽

Yogesh Jaluria

Keyword(s):

Thin Films ◽

Gallium Nitride ◽

Chemical Vapor Deposition ◽

Deposition Rate ◽

Vapor Deposition ◽

Chemical Vapor ◽

Transport Processes ◽

Carrier Gas ◽

Precursor Composition

Abstract Chemical vapor deposition (CVD) is a widely used manufacturing process for obtaining thin films of materials like silicon, silicon carbide, graphene and gallium nitride that are employed in the fabrication of electronic and optical devices. Gallium nitride (GaN) thin films are attractive materials for manufacturing optoelectronic device applications due to their wide band gap and superb optoelectronic performance. The reliability and durability of the devices depend on the quality of the thin films. The metal-organic chemical vapor deposition (MOCVD) process is a common technique used to fabricate high-quality GaN thin films. The deposition rate and uniformity of thin films are determined by the thermal transport processes and chemical reactions occurring in the reactor, and are manipulated by controlling the operating conditions and the reactor geometrical configuration. In this study, the epitaxial growth of GaN thin films on sapphire (AL2O3) substrates is carried out in two commercial MOCVD systems. This paper focuses on the composition of the precursor and the carrier gases, since earlier studies have shown the importance of precursor composition. The results show that the flow rate of trimethylgallium (TMG), which is the main ingredient in the process, has a significant effect on the deposition rate and uniformity of the films. Also the carrier gas plays an important role in deposition rate and uniformity. Thus, the use of an appropriate mixture of hydrogen and nitrogen as the carrier gas can improve the deposition rate and quality of GaN thin films.

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The compositional, structural, and magnetic properties of a Fe3O4/Ga2O3/GaN spin injecting hetero-structure grown by metal-organic chemical vapor deposition

Applied Surface Science ◽

10.1016/j.apsusc.2016.02.140 ◽

2016 ◽

Vol 388 ◽

pp. 141-147 ◽

Cited By ~ 4

Author(s):

Zhonghua Xu ◽

Shimin Huang ◽

Kun Tang ◽

Shulin Gu ◽

Shunming Zhu ◽

...

Keyword(s):

Magnetic Properties ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Hetero Structure ◽

Metal Organic ◽

Structural And Magnetic Properties ◽

Organic Chemical Vapor Deposition

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Metal Organic Chemical Vapor Deposition of Co-, Mn-, Co-Zr and Mn-Zr Oxide Thin Films

MRS Proceedings ◽

10.1557/proc-606-69 ◽

1999 ◽

Vol 606 ◽

Cited By ~ 1

Author(s):

D. Barreca ◽

F. Benetollo ◽

M. Bozza ◽

S. Bozza ◽

G. Carta ◽

...

Keyword(s):

Thin Films ◽

Water Vapor ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition ◽

Decomposition Efficiency ◽

Mn Oxides

AbstractDeposition of thin films of Co- and Mn- oxides as well as of their mixtures with ZrO2 have been carried out by MOCVD using Co(C5H5)2, Mn(C5F6HO2)2(THF)2and (C5Hs)2Zr(CH3)2as precursors. XRD and XPS analyses of the obtained deposits are reported. Introduction of water vapor into the reactor chamber during the flow of the precursors improved their decomposition efficiency and the quality of the films.

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ELECTRONIC, STRUCTURAL AND MAGNETIC PROPERTIES OF Co2FeAl THIN FILMS FOR POTENTIAL SPINTRONIC APPLICATIONS

SPIN ◽

10.1142/s2010324714400220 ◽

2014 ◽

Vol 04 (04) ◽

pp. 1440022 ◽

Cited By ~ 4

Author(s):

M. S. GABOR ◽

M. BELMEGUENAI ◽

F. ZIGHEM ◽

S. M. CHERIF ◽

T. PETRISOR ◽

...

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Annealing Temperature ◽

Uniaxial Anisotropy ◽

Half Metallicity ◽

Ferromagnetic Electrodes ◽

Stiffness Constant ◽

Plane Anisotropy ◽

Magnetic Analysis ◽

Structural And Magnetic Properties

This paper presents an overview concerning the electronic, structural and magnetic properties of Co 2 FeAl (CFA) thin films. We first used ab initio calculations of the electronic structure in order to discuss the half-metallicity of this compound. Involving a correlated structural-magnetic analysis, we then illustrate, experimentally, the effect of the thickness as well as the annealing temperature on the magnetic and structural properties of CFA films epitaxially grown on MgO (001) single crystal substrates. The X-ray diffraction shows that in our samples having the CFA(001)[110]// MgO (001)[100] epitaxial relation, the chemical order is enhanced as the thickness and the annealing temperature (T a ) are increased. Ferromagnetic resonance measurements reveal further dynamic magnetic properties. The gyromagnetic factor, estimated at 29.2 GHz/T, is both thickness and annealing temperature independent. The in-plane anisotropy results from the superposition between a dominant fourfold symmetry term, as expected for cubic crystal symmetry of the alloy, and a small uniaxial term. The fourfold anisotropy decreases with increasing thickness and annealing temperature. The exchange stiffness constant is thickness independent but increases with T a . In addition, the effective magnetization varies linearly with T a and with the inverse CFA thickness. This is due to the presence of perpendicular uniaxial anisotropy, estimated around -1.8 erg/cm2 at T a = 600°C and 1.05 erg/cm2 at T a = 265°C, respectively. Frequency and angular dependences of the FMR linewidth show two magnon scattering and mosaicity contributions which depend on the CFA thickness and T a . A Gilbert damping coefficient as low as 0.0011 is found for samples annealed at 600°C. Finally, we illustrate that these films can be used as ferromagnetic electrodes in sputtered epitaxial magnetic tunnel junctions (MTJ) based on MgO (001) tunnel barriers. These MTJs show an improvable TMR ratio around 95% at room temperature.

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