scholarly journals Study on the soft-start process of PSM high voltage power supply for ECRH

2019 ◽  
Vol 203 ◽  
pp. 04019
Author(s):  
Jian Zhang ◽  
Rui Guan ◽  
Fei Guo ◽  
Yu Zhou ◽  
Haozhang Sun ◽  
...  

The soft-start process of high voltage power supply (HVPS) based on pulse step modulation (PSM) for ECRH on EAST is introduced, which is the first procedure of system operation. The response process is detailed by proposing DC equivalent circuit model, process analysis and performance comparison is given under the conditions of different soft-start resistor parameters, and the theoretical analysis is proved by the simulation package ANSYS Simplorer simulations. The soft-start resistor is designed for the HVPS of 140GHz ECRH system for a smooth charging without overshoot of the capacitor[6], and the final experimental results show that it is in agreement with the theoretical analysis and is stable and reliable to the power devices.

2019 ◽  
Vol 143 ◽  
pp. 78-81
Author(s):  
Jian Zhang ◽  
Rui Guan ◽  
Fei Guo ◽  
Yu Zhou ◽  
Haozhang Sun ◽  
...  

2014 ◽  
Vol 42 (4) ◽  
pp. 1026-1031 ◽  
Author(s):  
Linglong Xia ◽  
Ming Zhang ◽  
Shaoxiang Ma ◽  
Ge Zhuang ◽  
Kexun Yu

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1228
Author(s):  
Marcin Winnicki ◽  
Artur Wiatrowski ◽  
Michał Mazur

High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In2O3 and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In2O3/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O2: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O2 mixture, together with the lowest resistivity of 0.03 Ω·cm.


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