scholarly journals Heterostructure InGaAlAs/InAlAs on the InP substrate for the electro-optical modulator based on the quantum confined Stark effect

2019 ◽  
Vol 30 ◽  
pp. 14004
Author(s):  
Dmitry Gulyaev ◽  
Dmitry Dmitriev ◽  
Alexander Toropov ◽  
Nataly Valisheva ◽  
Andrey Tsarev ◽  
...  
Keyword(s):  
Refractive Index ◽  
Quantum Wells ◽  
Stark Effect ◽  
Optical Modulator ◽  
Energy Structure ◽  
Interferometric Method ◽  
Electrooptic Effect ◽  
Quantum Confined Stark Effect ◽  
Inp Substrate ◽  
Electro Optical Modulator

The energy structure and the value of the electrooptic effect in heteroepitaxial structures (HES) with multiple InGaAlAs / InAlAs quantum wells have been studied. The interferometric method has been developed to determine small changes in the refractive index under transverse transmission of light through a layered structure. The length of the Mach-Zehnder interferometer for the modulator at HES with multiple InGaAlAs / InAlAs quantum wells has been chosen.

scholarly journals O-band quantum-confined Stark effect optical modulator from Ge/Si0.15Ge0.85 quantum wells by well thickness tuning

2014 ◽  
Vol 116 (19) ◽  
pp. 193103 ◽  
Author(s):  
Papichaya Chaisakul ◽  
Jacopo Frigerio ◽  
Delphine Marris-Morini ◽  
Vladyslav Vakarin ◽  
Daniel Chrastina ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Optical Modulator ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined

Ge quantum well plasmon-enhanced quantum confined Stark effect modulator

2014 ◽  
Vol 1627 ◽  
Author(s):  
P. Chaisakul ◽  
D. Marris-Morini ◽  
N. Abadía ◽  
J. Frigerio ◽  
G. Isella ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Confinement ◽  
Stark Effect ◽  
Active Material ◽  
Transverse Magnetic ◽  
Optical Modulator ◽  
Plasmonic Mode ◽  
Quantum Confined Stark Effect ◽  
Plasmon Enhancement ◽  
Plasmon Propagation

ABSTRACTWe theoretically and experimentally investigate a novel modulation concept on silicon (Si) based on the combination of quantum confinement and plasmon enhancement effects. We experimentally study the suitability of Ge/SiGe quantum wells (QWs) on Si as the active material for a plasmon-enhanced optical modulator. We demonstrate that in QW structures absorption and modulation of light with transverse magnetic (TM) polarization are greatly enhanced due to favorable selection rules. Later, we theoretically study the plasmon propagation at the metal-Ge/SiGe QW interface. We design a novel Ge/SiGe QW structure that allows maximized overlap between the plasmonic mode and the underlying Ge/SiGe QWs.

Determination of unscreened exciton states in polar ZnO/(Mg,Zn)O quantum wells with strong quantum-confined Stark effect

2013 ◽  
Vol 88 (4) ◽  
Author(s):  
Marko Stölzel ◽  
Alexander Müller ◽  
Gabriele Benndorf ◽  
Matthias Brandt ◽  
Michael Lorenz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined

Quantum confined Stark effect in ZnCdSe/MgZnCdSe multiple quantum wells grown on InP substrates

1998 ◽  
Vol 184-185 ◽  
pp. 732-736 ◽  
Author(s):  
Takeshi Nagano ◽  
Ichirou Nomura ◽  
Masaru Haraguchi ◽  
Masayuki Arai ◽  
Hiroshi Hattori ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined ◽  
Inp Substrates

Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy

1998 ◽  
Vol 537 ◽  
Author(s):  
Nicolas Grandjean ◽  
Jean Massies ◽  
Mathieu Leroux ◽  
Marguerite Latigt ◽  
Pierre Lefebvre ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Stark Effect ◽  
X Ray Diffraction ◽  
X Ray ◽  
Quantum Confined Stark Effect ◽  
Sapphire Substrates ◽  
Gan Buffer Layer ◽  
Large Quantum

AbstractAIGaN/GaN quantum well (QWs) were grown on (0001) sapphire substrates by molecular beam epitaxy (MBE) using ammonia as nitrogen precursor. The Al composition in the barriers was varied between 8 and 27 % and the well thickness from 4 to 17 monolayers (MLs, 1ML = 2.59Å). X-ray diffraction (XRD) experiments are used to investigate the strain state of both the well and the barriers. The QW transition energy are measured by low temperature photoluminescence (PL). A large quantum confined Stark effect is observed leading to QW luminescence much lower than the emission line of the GaN buffer layer for well width above a certain critical thickness. The built-in electric field responsible for such a phenomenon is deduced from fit of the PL data. Its magnitude is of several hundred kV/cm and increases linearly with the Al composition.

Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

2009 ◽  
Vol 15 (4) ◽  
pp. 1080-1091 ◽  
Author(s):  
Jae-Hyun Ryou ◽  
P.D. Yoder ◽  
Jianping Liu ◽  
Z. Lochner ◽  
Hyunsoo Kim ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined
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