EFFECTIVE QUASIPARTICLE RECOMBINATION TIMES AND ELECTRONIC DENSITY OF STATES AT THE FERMI LEVEL IN SUPERCONDUCTING FILMS

The electronic density of states (DOS) of both pure and Co-substituted YBa 2 Cu 3 O 7 has been calculated by a recursion method. The results show that the total DOS at the Fermi level of YBa 2 Cu 3 O 7 mainly comes from the contributions of the O 2p and Cu 3d orbitals. After Co doping, the O 2p–Cu 3d bonds are destroyed while the O 2p–Co 3d bonds are formed at lower energies, and the total DOS at the Fermi level decreases strikingly. In addition, our results reveal that the CuO chain has a one-dimensional feature.

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The Study of Electronic Density of States and Optical Properties of ZnO Nanotube by First-Principles

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.713-715.2966 ◽

2015 ◽

Vol 713-715 ◽

pp. 2966-2969

Author(s):

Yue Fan ◽

Shao Chang Chen

Keyword(s):

Optical Properties ◽

Fermi Level ◽

Density Of States ◽

First Principles ◽

Electronic Density ◽

Electronic Density Of States ◽

Zno Nanotube ◽

Narrow Energy Range ◽

Wide Energy ◽

Better Than

In this paper, we studied the electronic density of states (DOS) and optical properties ZnO using first-principles method. We find that the electronic density of states was different in bulk ZnO and ZnO nanotube. The DOS of bulk ZnO spread at wide energy while the DOS of ZnO nanotube concentrated in a narrow energy range. The peak around-18 eV moved to a higher energy. The peaks more than Fermi level concentrated to the Fermi level, which meant the conductivity of ZnO nanotube was better than that of bulk ZnO. We also calculated the optical properties of ZnO nanotube. The optical properties showed that there were peaks around 8 eV, which may come from electrons transition between Zn 3dand O 2pstates. Our calculation provided a reference for the application of ZnO nanotube in optical devices.

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Chemical Bonding and Pseudogap in Zn- and Cd-based Compounds with Complex Hexagonal Structures

MRS Proceedings ◽

10.1557/proc-805-ll4.2 ◽

2003 ◽

Vol 805 ◽

Cited By ~ 1

Author(s):

Y. Ishii ◽

K. Nozawa ◽

T. Fujiwara

Keyword(s):

Fermi Level ◽

Density Of States ◽

Chemical Bonding ◽

First Principles ◽

Electronic Structures ◽

Unit Cell ◽

First Principles Calculations ◽

Electronic Density ◽

Electronic Density Of States ◽

Crystal Orbital

ABSTRACTElectronic structures of hexagonal Zn-Mg-Y and Cd58Y13 compounds are studied by first-principles calculations. Both of the systems show deep pseudogap in the electronic density of states near the Fermi level and considered to be stabilized electronically. To illustrate bonding nature of electronic wavefunctions, the crystal orbital Hamilton population (COHP) is calculated for neighboring pairs of atoms in the unit cell. It is found that the bonding nature is changed from bonding to anti-bonding almost exactly at the Fermi level for Zn-Zn and Cd-Cd bonds. On the contrary, for Zn/Cd-Y bonds, both of the states below and above the pseudogap behave as bonding ones. Possible effects of the p-d hybridization are discussed.

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Magnetic phase diagrams of amorphous (Ni 100-x Fe x )-metalloid alloys: The key role of the electronic density of states at the Fermi level for the onset of magnetic order

Journal of Magnetism and Magnetic Materials ◽

10.1016/j.jmmm.2017.05.056 ◽

2017 ◽

Vol 441 ◽

pp. 328-332

Author(s):

L.F. Kiss ◽

I. Bakonyi

Keyword(s):

Fermi Level ◽

Phase Diagrams ◽

Density Of States ◽

Magnetic Order ◽

Magnetic Phase ◽

Electronic Density ◽

Electronic Density Of States ◽

Magnetic Phase Diagrams

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Correlation between ferroelectricity and electronic density of states near the Fermi level in BaTiO3

physica status solidi (b) ◽

10.1002/pssb.200301981 ◽

2004 ◽

Vol 241 (5) ◽

pp. 1058-1065 ◽

Cited By ~ 6

Author(s):

M. Hidaka ◽

N. Tokiwa ◽

S. Takahashi ◽

J.-Y. Choi ◽

J. M. Lee

Keyword(s):

Fermi Level ◽

Density Of States ◽

Electronic Density ◽

Electronic Density Of States

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Antimony as A Passivant of Si(111) in the Si(111) (√3×√3)-Sb System

MRS Proceedings ◽

10.1557/proc-259-505 ◽

1992 ◽

Vol 259 ◽

Author(s):

A. Hughes ◽

T-H. Shen ◽

C.C. Matthai

Keyword(s):

Fermi Level ◽

Valence Band ◽

Density Of States ◽

Surface State ◽

Tight Binding ◽

Valence Band Maximum ◽

Electronic Density ◽

Band Maximum ◽

Electronic Density Of States ◽

Tight Binding Method

ABSTRACTThe electronic density of states (DOS) for the Si(111) (√3×√3)-Sb system has been calculated using the tight binding method in the Extended Hiickel Approximation. We find that there is a gap of about 0.8eV between the valence band maximum (VBM) and a surface state. This is in contrast with the case of the unreconstructed (lxl) surface where the Fermi level lies at the surface state.

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