LARGE-AREA DEPOSITION OF AMORPHOUS-SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-671-C4-674
Author(s):  
M. Matsumura ◽  
Y. Uchida
2005 ◽  
Vol 870 ◽  
Author(s):  
Subhendu Guha ◽  
Jeffrey Yang

AbstractLarge-area deposition of thin-film amorphous silicon alloy triple-junction solar cells on lightweight and flexible stainless steel substrate is described. The proprietary roll-to-roll operation enables continuous depositions of sophisticated multi-layer structures. The deposition methods include sputtering and plasma-enhanced chemical vapor depositions. Spectrumsplitting triple-junction solar cell design, manufacturing processes, and product applications are presented.


2001 ◽  
Vol 395 (1-2) ◽  
pp. 61-65 ◽  
Author(s):  
Andrea Ledermann ◽  
Urban Weber ◽  
Chandrachur Mukherjee ◽  
Bernd Schroeder

2003 ◽  
Vol 430 (1-2) ◽  
pp. 73-77 ◽  
Author(s):  
Andrea Pflüger ◽  
Bernd Schröder ◽  
Hans-Jörg Bart

1997 ◽  
Vol 467 ◽  
Author(s):  
J. Kuske ◽  
U. Stephan ◽  
W. Nowak ◽  
S. Röhlecke ◽  
A. Kottwitz

ABSTRACTThe production of amorphous silicon devices usually requires large area, high-deposition-rate plasma reactors. Non-uniformity of the film thickness at high power and deposition rate is found to be an important factor for large area deposition.Increasing the radio frequency from the conventional 13.56 MHz up to VHF has demonstrated advantages for the deposition of a-Si:H films, including higher deposition rates and lower particle generation. The use of VHF for large area deposition leads to the generation of standing waves and evanescent waveguide modes at the electrode surface and on the power feeding lines. Thereby increasing the non-uniformity of the film thickness. The uniformity of the film thickness for an excitation frequency strongly depends on the deposition parameters e.g. pressure, input power, silane flow and the value of load impedances. With increasing exciting frequencies the range of deposition parameters for obtaining uniform films narrows.Subsequently it is shown that for a large-area plasma-box reactor (500 × 600 mm2 plate size) with a double-sided RF electrode, the non-uniformity of the film decreases due to a homoge-neization of the electrode voltage distribution by using multiple power supplies and load impedances on the end of the RF electrode. The uniformity errors decrease from ±20% to ±2.4% (27.12MHz) and from ±40% to ±5.9% (54.24MHz). Experimental results of the film uniformity will be discussed in dependence on excitation frequencies and the deposition parameters.


2020 ◽  
Vol 90 (3) ◽  
pp. 30502
Author(s):  
Alessandro Fantoni ◽  
João Costa ◽  
Paulo Lourenço ◽  
Manuela Vieira

Amorphous silicon PECVD photonic integrated devices are promising candidates for low cost sensing applications. This manuscript reports a simulation analysis about the impact on the overall efficiency caused by the lithography imperfections in the deposition process. The tolerance to the fabrication defects of a photonic sensor based on surface plasmonic resonance is analysed. The simulations are performed with FDTD and BPM algorithms. The device is a plasmonic interferometer composed by an a-Si:H waveguide covered by a thin gold layer. The sensing analysis is performed by equally splitting the input light into two arms, allowing the sensor to be calibrated by its reference arm. Two different 1 × 2 power splitter configurations are presented: a directional coupler and a multimode interference splitter. The waveguide sidewall roughness is considered as the major negative effect caused by deposition imperfections. The simulation results show that plasmonic effects can be excited in the interferometric waveguide structure, allowing a sensing device with enough sensitivity to support the functioning of a bio sensor for high throughput screening. In addition, the good tolerance to the waveguide wall roughness, points out the PECVD deposition technique as reliable method for the overall sensor system to be produced in a low-cost system. The large area deposition of photonics structures, allowed by the PECVD method, can be explored to design a multiplexed system for analysis of multiple biomarkers to further increase the tolerance to fabrication defects.


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