Analysis for the Characterization of Oxygen Implanted Silicon (SIMOX) by Spectroscopic Ellipsometry

1990 ◽  
Vol 209 ◽  
Author(s):  
M.G. Doss ◽  
D. Chandler-Horowitz ◽  
J. F. Marchiando ◽  
S. Krause ◽  
S. Seraphin
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Spectroscopic Ellipsometry ◽  
Angle Of Incidence ◽  
High Current ◽  
Layer Model ◽  
Unusual Structure ◽  
Transmission Electron ◽  
Best Fit

ABSTRACTSamples of SIMOX have been prepared by implantation in a high-current implanter (density ≍ 1 mA/cm2) and by annealing at 1300°C for 6 hours. Transmission electron microscopy reveals unusual structure in these samples. Spectroscopic ellipsometry has been used to analyze these structures. Ellipsometric measurements were collected at an angle of incidence of 75. deg, with photon energies from 1.5 to 5.0 eV, and using a rotating polarizer configuration. The measurements were analyzed with three models: a three-layer model, a four-layer model, and a five-layer model. The five-layer model provided the best fit of the three. This model identified a layer of crystalline Si inclusions (“islands”) within the SiO2 layer. A method is presented that provides initial estimates for the thicknesses of the top three layers to help start the regression analysis.

Characterization of the ZnSe/GaAs Interface Layer by Tem and Spectroscopic Ellipsometry

1992 ◽  
Vol 280 ◽  
Author(s):  
R. Dahmani ◽  
L. Salamanca-Riba ◽  
D. P. Beesabathina ◽  
N. V. Nguyen ◽  
D. Chandler-Horowitz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Spectroscopic Ellipsometry ◽  
Interface Layer ◽  
Transmission Electron ◽  
Three Phase ◽  
Znse Thin Films ◽  
Microscopy Images

ABSTRACTThe interface between ZnSe thin films and GaAs substrates is characterized by High Resolution Transmission Electron Microscopy and room temperature Spectroscopic Ellipsometry. The films were grown on (001) GaAs by Molecular Beam Epitaxy. A three-phase model is used in the reduction of the ellipsometric data, from which the presence of a transition layer of Ga2Se3, with a thickness of less than 1 nm, is confirmed. These results corroborate the high resolution transmission electron microscopy images obtained from the same samples.

Characterization of Ion Implanted Silicon by Spectroscopic Ellipsometry and Cross Section Transmission Electron Microscopy

1983 ◽  
Vol 27 ◽  
Author(s):  
P. J. Mcmarr ◽  
K. Vedam ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Cross Sections ◽  
Spectroscopic Ellipsometry ◽  
Dose Range ◽  
Depth Profiles ◽  
Transmission Electron ◽  
Ion Implanted

ABSTRACTThis paper deals with the application of spectroscopic ellipsometry (SE) and cross-section transmission electron microscopy (XTEM), to the characterization of damaged surface layers in ion implanted Si single crystal. Si samples of 2–6Ω·cm resistivity and <100> orientation were implanted with 28Si+ ions in the dose range of 1.0 × 1016–1.5 × 1016 ions/cm2 using ion energies of 100 and 200 keV. Ion current densities were varied from 6 to 200 μA/cm2. Depth profiles of the implanted samples were evaluated from the spectroscopic ellipsometry data. These calculated profiles were compared with the TEM micrographs of the cross sections of the samples. Excellent agreement is obtained between the two characterization techniques. The characteristics of the depth profiles of the samples, as established by the two techniques, is shown to be the result of annealing occuring during implantation.

Characterization of submicrometer fluid Inclusions in minerals by Analytical/Transmission Electron Microscopy and electron diffraction

1990 ◽  
Vol 48 (4) ◽  
pp. 424-424
Author(s):  
George Guthrie ◽  
David Veblen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Electron Diffraction ◽  
Light Microscopy ◽  
Fluid Inclusions ◽  
Energy Dispersive Spectrometer ◽  
Analytical Transmission Electron Microscopy ◽  
Transmission Electron

The nature of a geologic fluid can often be inferred from fluid-filled cavities (generally <100 μm in size) that are trapped during the growth of a mineral. A variety of techniques enables the fluids and daughter crystals (any solid precipitated from the trapped fluid) to be identified from cavities greater than a few micrometers. Many minerals, however, contain fluid inclusions smaller than a micrometer. Though inclusions this small are difficult or impossible to study by conventional techniques, they are ideally suited for study by analytical/ transmission electron microscopy (A/TEM) and electron diffraction. We have used this technique to study fluid inclusions and daughter crystals in diamond and feldspar.Inclusion-rich samples of diamond and feldspar were ion-thinned to electron transparency and examined with a Philips 420T electron microscope (120 keV) equipped with an EDAX beryllium-windowed energy dispersive spectrometer. Thin edges of the sample were perforated in areas that appeared in light microscopy to be populated densely with inclusions. In a few cases, the perforations were bound polygonal sides to which crystals (structurally and compositionally different from the host mineral) were attached (Figure 1).

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