dc and rf measurements of the kink effect in 0.2 μm gate length AlInAs/GaInAs/InP modulation‐doped field‐effect transistors

1989 ◽  
Vol 54 (21) ◽  
pp. 2139-2141 ◽  
Author(s):  
L. F. Palmateer ◽  
P. J. Tasker ◽  
W. J. Schaff ◽  
L. D. Nguyen ◽  
L. F. Eastman
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Length ◽  
Kink Effect ◽  
Rf Measurements

scholarly journals Effects of Doping Concentration on Device Performance of GaN-based Nano-regime MOSFETs

2017 ◽  
Vol 16 (1) ◽  
pp. 69-74
Author(s):  
Md Iktiham Bin Taher ◽  
Md. Tanvir Hasan
Keyword(s):  
Field Effect ◽  
Doping Concentration ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Device Performance ◽  
Gate Length ◽  
Drain Voltage ◽  
Switching Device ◽  
Device Applications

Gallium nitride (GaN) based metal-oxide semiconductor field-effect transistors (MOSFETs) are promising for switching device applications. The doping of n- and p-layers is varied to evaluate the figure of merits of proposed devices with a gate length of 10 nm. Devices are switched from OFF-state (gate voltage, VGS = 0 V) to ON-state (VGS = 1 V) for a fixed drain voltage, VDS = 0.75 V. The device with channel doping of 1×1016 cm-3 and source/drain (S/D) of 1×1020 cm-3 shows good device performance due to better control of gate over channel. The ON-current (ION), OFF-current (IOFF), subthreshold swing (SS), drain induce barrier lowering (DIBL), and delay time are found to be 6.85 mA/μm, 5.15×10-7 A/μm, 87.8 mV/decade, and 100.5 mV/V, 0.035 ps, respectively. These results indicate that GaN-based MOSFETs are very suitable for the logic switching application in nanoscale regime.

scholarly journals Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length

2020 ◽  
Vol 67 (6) ◽  
pp. 2270-2275 ◽  
Author(s):  
Kevin G. Crawford ◽  
James D. Weil ◽  
Pankaj B. Shah ◽  
Dmitry A. Ruzmetov ◽  
Mahesh R. Neupane ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Length

Sub-5 nm monolayer germanium selenide (GeSe) MOSFETs: towards a high performance and stable device

Nanoscale ◽  
2020 ◽  
Vol 12 (28) ◽  
pp. 15443-15452
Author(s):  
Ying Guo ◽  
Feng Pan ◽  
Gaoyang Zhao ◽  
Yajie Ren ◽  
Binbin Yao ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Device Performance ◽  
Gate Length ◽  
Germanium Selenide ◽  
Technology Roadmap

ML GeSe field-effect transistors have an excellent device performance, even at the 1 nm gate-length. The on-state current of the devices can fulfill the requirements of the International Technology Roadmap for Semiconductors (2013 version).

Validity of mobility universality for scaled metal–oxide–semiconductor field-effect transistors down to 100 nm gate length

2002 ◽  
Vol 92 (9) ◽  
pp. 5228-5232 ◽  
Author(s):  
S. Matsumoto ◽  
K. Hisamitsu ◽  
M. Tanaka ◽  
H. Ueno ◽  
M. Miura-Mattausch ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Length

Negative differential resistance effects of trench-type InGaAs quantum-wire field-effect transistors with 50-nm gate-length

2003 ◽  
Vol 83 (4) ◽  
pp. 701-703 ◽  
Author(s):  
Kee-Youn Jang ◽  
Takeyoshi Sugaya ◽  
Cheol-Koo Hahn ◽  
Mutsuo Ogura ◽  
Kazuhiro Komori ◽  
...  
Keyword(s):  
Quantum Wire ◽  
Negative Differential Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Differential Resistance ◽  
Gate Length
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