Current saturation and kink effect in zero-bandgap double-gate silicene field-effect transistors

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

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Analytical Threshold Voltage Model of Schottky-source/drain (Schottky-S/D) double gate-all-around (DGAA) Field-Effect-Transistors (FETs)

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783617 ◽

2019 ◽

Cited By ~ 1

Author(s):

Arun Kumar ◽

P.S.T.N. Srinivas ◽

Pramod Kumar Tiwari

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Threshold Voltage Model

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Consideration of Performance Limitation of Sub-100-nm Double-Gate Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.l1096 ◽

2002 ◽

Vol 41 (Part 2, No. 10A) ◽

pp. L1096-L1098 ◽

Cited By ~ 2

Author(s):

Shin-ichiro Yanagi ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Performance Limitation

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Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3084 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3084-3087 ◽

Cited By ~ 18

Author(s):

Yongxun Liu ◽

Etsuro Sugimata ◽

Kenichi Ishii ◽

Meishoku Masahara ◽

Kazuhiko Endo ◽

...

Keyword(s):

Experimental Study ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Wet Etching ◽

Oxide Semiconductor ◽

Double Gate ◽

Channel Surface ◽

Effective Carrier

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A New Approach to the Characteristics and Short-Channel Effects of Double-Gate Carbon Nanotube Field-Effect Transistors using MATLAB: A Numerical Study

Zeitschrift für Naturforschung A ◽

10.5560/zna.2012-0024 ◽

2012 ◽

Vol 67 (6-7) ◽

pp. 317-326 ◽

Cited By ~ 1

Author(s):

Alireza Heidari ◽

Niloofar Heidari ◽

Foad Khademi Jahromi ◽

Roozbeh Amiri ◽

Mohammadali Ghorbani

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistors ◽

Open Boundary ◽

Double Gate ◽

Short Channel Effects ◽

Drain Voltage ◽

Short Channel ◽

Channel Effects ◽

The Impact

In this paper, first, the impact of different gate arrangements on the short-channel effects of carbon nanotube field-effect transistors with doped source and drain with the self-consistent solution of the three-dimensional Poisson equation and the Schr¨odinger equation with open boundary conditions, within the non-equilibrium Green function, is investigated. The results indicate that the double-gate structure possesses a quasi-ideal subthreshold oscillation and an acceptable decrease in the drain induced barrier even for a relatively thick gate oxide (5 nm). Afterward, the electrical characteristics of the double-gate carbon nanotube field-effect transistors (DG-CNTFET) are investigated. The results demonstrate that an increase in diameter and density of the nanotubes in the DG-CNTFET increases the on-state current. Also, as the drain voltage increases, the off-state current of the DG-CNTFET decreases. In addition, regarding the negative gate voltages, for a high drain voltage, increasing in the drain current due to band-to-band tunnelling requires a larger negative gate voltage, and for a low drain voltage, resonant states appear

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