Generation and anneal of a new kind of interface state in stressed and high‐temperature annealed metal‐oxide‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.106958 ◽

1992 ◽

Vol 60 (2) ◽

pp. 186-188 ◽

Author(s):

M. Berger ◽

E. Avni ◽

J. Shappir

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Semiconductor Devices ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Interface state‐induced shift of the oxide and semiconductor core levels for metal–oxide–semiconductor devices

Journal of Applied Physics ◽

10.1063/1.362954 ◽

1996 ◽

Vol 80 (3) ◽

pp. 1578-1582 ◽

Author(s):

H. Kobayashi ◽

K. Namba ◽

Y. Yamashita ◽

Y. Nakato ◽

T. Komeda ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Effect of high‐temperature anneal on interface states generation in stressed metal‐oxide‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.104598 ◽

1991 ◽

Vol 58 (6) ◽

pp. 598-600 ◽

Author(s):

M. Berger ◽

E. Avni ◽

J. Shappir

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Semiconductor Devices ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Temperature Anneal

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Extra interface state generation enhanced by fluorine in tungsten‐polycided metal‐oxide‐semiconductor devices with nitrided oxide gate dielectric

Applied Physics Letters ◽

10.1063/1.114493 ◽

1995 ◽

Vol 67 (10) ◽

pp. 1456-1458 ◽

Author(s):

C. W. Chen ◽

Y. K. Fang ◽

G. Y. Lee ◽

J. C. Hsieh ◽

M. S. Liang

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

State Generation

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High-temperature CO2 treatment for improving electrical characteristics of 4H-SiC(0001) metal-oxide-semiconductor devices

Applied Physics Express ◽

10.35848/1882-0786/ac23e8 ◽

2021 ◽

Author(s):

Takuji Hosoi ◽

Momoe Ohsako ◽

Takayoshi SHIMURA ◽

Heiji WATANABE

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

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Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing

Applied Physics Letters ◽

10.1063/1.126103 ◽

2000 ◽

Vol 76 (12) ◽

pp. 1585-1587 ◽

Author(s):

K. Fukuda ◽

S. Suzuki ◽

T. Tanaka ◽

K. Arai

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Hydrogen Annealing ◽

Semiconductor Structures

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Response to “Comment on ‘Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing’ ” [Appl. Phys. Lett. 78, 4043 (2001)]

Applied Physics Letters ◽

10.1063/1.1379979 ◽

2001 ◽

Vol 78 (25) ◽

pp. 4045-4045 ◽

Author(s):

K. Fukuda ◽

K. Arai ◽

S. Suzuki ◽

T. Tanaka

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Hydrogen Annealing ◽

Semiconductor Structures

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Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.4917528 ◽

2015 ◽

Vol 106 (14) ◽

pp. 143504 ◽

Author(s):

Xiao Shen ◽

Sarit Dhar ◽

Sokrates T. Pantelides

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electron Trapping ◽

Temperature Electron

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Silicon-on-insulator technology for high temperature metal oxide semiconductor devices and circuits

Materials Science and Engineering B ◽

10.1016/0921-5107(94)04018-y ◽

1995 ◽

Vol 29 (1-3) ◽

pp. 7-12 ◽

Author(s):

Denis Flandre

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Silicon On Insulator Technology

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Comment on “Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing” [Appl. Phys. Lett. 76, 1585 (2000)]

Applied Physics Letters ◽

10.1063/1.1379978 ◽

2001 ◽

Vol 78 (25) ◽

pp. 4043-4044 ◽

Author(s):

V. V. Afanas’ev ◽

A. Stesmans ◽

M. Bassler ◽

G. Pensl ◽

M. J. Schulz

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Hydrogen Annealing ◽

Semiconductor Structures

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Improvement on the Electrical Characteristics of HfO[sub x]N[sub y]-Gated Metal-Oxide-Semiconductor Devices by High-Temperature Annealing

Electrochemical and Solid-State Letters ◽

10.1149/1.2337858 ◽

2006 ◽

Vol 9 (11) ◽

pp. F80 ◽

Author(s):

Chin-Lung Cheng ◽

Kuei-Shu Chang-Liao ◽

Tien-Ko Wang

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

High Temperature Annealing

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