Improvement on the Electrical Characteristics of HfO[sub x]N[sub y]-Gated Metal-Oxide-Semiconductor Devices by High-Temperature Annealing

2006 ◽  
Vol 9 (11) ◽  
pp. F80 ◽  
Author(s):  
Chin-Lung Cheng ◽  
Kuei-Shu Chang-Liao ◽  
Tien-Ko Wang
Keyword(s):  
High Temperature ◽  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
High Temperature Annealing

Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres

2018 ◽  
Vol 6 (44) ◽  
pp. 12079-12085 ◽  
Author(s):  
Anna Regoutz ◽  
Gregor Pobegen ◽  
Thomas Aichinger
Keyword(s):  
High Temperature ◽  
Metal Oxide ◽  
High Power ◽  
Photoelectron Spectroscopy ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Interface Chemistry ◽  
X Ray ◽  
Immense Potential

SiC has immense potential as the semiconductor for future high power metal–oxide–semiconductor devices. X-ray photoelectron spectroscopy (XPS) to systematically study the 4H-SiC/SiO2 interface after high temperature nitridation treatments in a variety of atmospheres.

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