High-temperature CO2 treatment for improving electrical characteristics of 4H-SiC(0001) metal-oxide-semiconductor devices

2021 ◽  
Author(s):  
Takuji Hosoi ◽  
Momoe Ohsako ◽  
Takayoshi SHIMURA ◽  
Heiji WATANABE
Keyword(s):  
High Temperature ◽  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Co2 Treatment

Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres

2018 ◽  
Vol 6 (44) ◽  
pp. 12079-12085 ◽  
Author(s):  
Anna Regoutz ◽  
Gregor Pobegen ◽  
Thomas Aichinger
Keyword(s):  
High Temperature ◽  
Metal Oxide ◽  
High Power ◽  
Photoelectron Spectroscopy ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Interface Chemistry ◽  
X Ray ◽  
Immense Potential

SiC has immense potential as the semiconductor for future high power metal–oxide–semiconductor devices. X-ray photoelectron spectroscopy (XPS) to systematically study the 4H-SiC/SiO2 interface after high temperature nitridation treatments in a variety of atmospheres.

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