Electrical Characterization of SiGe Heterojunction Bipolar Transistors (HBTs) Formed by Molecular Beam Epitaxy (MBE)

Condensed Systems of Low Dimensionality - NATO ASI Series ◽

10.1007/978-1-4684-1348-9_51 ◽

1991 ◽

pp. 669-674

Author(s):

D. J. Godfrey

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Electrical Characterization ◽

Bipolar Transistors

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Molecular beam epitaxy growth and characterization of InGaAlAs-collector heterojunction bipolar transistors with 140 GHz fmax and 20 V breakdown

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588904 ◽

1996 ◽

Vol 14 (3) ◽

pp. 2221 ◽

Author(s):

T. R. Block

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Molecular Beam Epitaxy Growth

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Characterization of heavily carbon-doped GaAs with a hole concentration of the order of 1021 cm−3 grown by metalorganic molecular beam epitaxy and its application to InGaP/GaAs heterojunction bipolar transistors

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80277-j ◽

1995 ◽

Vol 150 ◽

pp. 585-590 ◽

Author(s):

Jun-ichi Shirakashi ◽

Toshiaki Azuma ◽

Fumihiko Fukuchi ◽

Makoto Konagai ◽

Kiyoshi Takahashi

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Hole Concentration ◽

Bipolar Transistors ◽

Carbon Doped ◽

Metalorganic Molecular Beam Epitaxy

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Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

MRS Proceedings ◽

10.1557/proc-241-199 ◽

1991 ◽

Vol 241 ◽

Author(s):

Bijan Tadayon ◽

Mohammad Fatemi ◽

Saied Tadayon ◽

F. Moore ◽

Harry Dietrich

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Substrate Temperature ◽

Molecular Beam ◽

Electrical Characterization ◽

Physical Characteristics ◽

Hall Measurements ◽

Undoped Material ◽

Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

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Molecular Beam Epitaxy of Ga0.99Be0.01As for very high Speed Heterojunction Bipolar Transistors

Properties of Impurity States in Superlattice Semiconductors - NATO ASI Series ◽

10.1007/978-1-4684-5553-3_3 ◽

1988 ◽

pp. 19-28 ◽

Author(s):

J. L. Liévin ◽

F. Alexandre ◽

C. Dubon-Chevallier

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

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Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.1866 ◽

1997 ◽

Vol 36 (Part 1, No. 3B) ◽

pp. 1866-1868 ◽

Author(s):

Kiyoshi Ouchi ◽

Tomoyoshi Mishima ◽

Kazuhiro Mochizuki ◽

Tohru Oka ◽

Tomonori Tanoue

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Carbon Doped ◽

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Chemical and electrical characterization of AlGaAs/GaAs heterojunction bipolar transistors treated by electron cyclotron resonance plasmas

Applied Physics Letters ◽

10.1063/1.107122 ◽

1992 ◽

Vol 60 (16) ◽

pp. 1996-1998 ◽

Author(s):

P. W. Li ◽

Q. Wang ◽

E. S. Yang

Keyword(s):

Heterojunction Bipolar Transistors ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electrical Characterization ◽

Bipolar Transistors ◽

Electron Cyclotron

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High performance GaAsSb∕InP double heterojunction bipolar transistors grown by gas-source molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2190678 ◽

2006 ◽

Vol 24 (3) ◽

pp. 1564 ◽

Author(s):

Bing-Ruey Wu ◽

Benjamin F. Chu-Kung ◽

Milton Feng ◽

K. Y. Cheng

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

High Performance ◽

Molecular Beam ◽

Bipolar Transistors ◽

Double Heterojunction

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GaAs/AlGaAs heterojunction bipolar transistors with a base doping 10[sup 20] cm[sup −3] grown by solid-source molecular beam epitaxy using CBr[sub 4]

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590224 ◽

1998 ◽

Vol 16 (3) ◽

pp. 972 ◽

Author(s):

M. Micovic

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

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High-gain InAlAs/InGaAs npn single heterojunction bipolar transistors grown by molecular beam epitaxy

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels ◽

10.1109/iciprm.1992.235671 ◽

2003 ◽

Author(s):

H.-H. Lin ◽

C.-H. Huang

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

High Gain ◽

Bipolar Transistors

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Electrical characterization of ensemble of GaN nanowires grown by the molecular beam epitaxy technique

Applied Physics Letters ◽

10.1063/1.4819731 ◽

2013 ◽

Vol 103 (9) ◽

pp. 092103 ◽

Author(s):

Vl. Kolkovsky ◽

Z. R. Zytkiewicz ◽

M. Sobanska ◽

K. Klosek

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Electrical Characterization ◽

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