Extra interface state generation enhanced by fluorine in tungsten‐polycided metal‐oxide‐semiconductor devices with nitrided oxide gate dielectric

C. W. Chen; Y. K. Fang; G. Y. Lee; J. C. Hsieh; M. S. Liang

doi:10.1063/1.114493

Extra interface state generation enhanced by fluorine in tungsten‐polycided metal‐oxide‐semiconductor devices with nitrided oxide gate dielectric

Applied Physics Letters ◽

10.1063/1.114493 ◽

1995 ◽

Vol 67 (10) ◽

pp. 1456-1458 ◽

Cited By ~ 1

Author(s):

C. W. Chen ◽

Y. K. Fang ◽

G. Y. Lee ◽

J. C. Hsieh ◽

M. S. Liang

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

State Generation

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Interface state‐induced shift of the oxide and semiconductor core levels for metal–oxide–semiconductor devices

Journal of Applied Physics ◽

10.1063/1.362954 ◽

1996 ◽

Vol 80 (3) ◽

pp. 1578-1582 ◽

Cited By ~ 13

Author(s):

H. Kobayashi ◽

K. Namba ◽

Y. Yamashita ◽

Y. Nakato ◽

T. Komeda ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices

Semiconductor Science and Technology ◽

10.1088/1361-6641/aafc65 ◽

2019 ◽

Vol 34 (3) ◽

pp. 035027 ◽

Cited By ~ 1

Author(s):

Lu Liu ◽

Hanhan Lu ◽

Jingping Xu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Mismatch of dielectric constants at the interface of nanometer metal-oxide-semiconductor devices with high-K gate dielectric impacts on the inversion charge density

Pramana ◽

10.1007/s12043-011-0052-0 ◽

2011 ◽

Vol 76 (4) ◽

pp. 657-666 ◽

Cited By ~ 4

Author(s):

LING-FENG MAO

Keyword(s):

Metal Oxide ◽

Charge Density ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Dielectric Constants ◽

Oxide Semiconductor ◽

High K ◽

Inversion Charge ◽

High K Gate Dielectric

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Generation and anneal of a new kind of interface state in stressed and high‐temperature annealed metal‐oxide‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.106958 ◽

1992 ◽

Vol 60 (2) ◽

pp. 186-188 ◽

Cited By ~ 6

Author(s):

M. Berger ◽

E. Avni ◽

J. Shappir

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Semiconductor Devices ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Transconductance degradation and interface state generation in metal‐oxide‐semiconductor field‐effect transistors with oxynitride gate dielectrics under hot‐carrier stress

Applied Physics Letters ◽

10.1063/1.102819 ◽

1990 ◽

Vol 56 (3) ◽

pp. 250-252 ◽

Cited By ~ 8

Author(s):

G. Q. Lo ◽

W. C. Ting ◽

D. K. Shih ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress ◽

State Generation

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Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal–oxide–semiconductor devices with improved gate dielectric reliability

Applied Physics Express ◽

10.7567/apex.11.015701 ◽

2017 ◽

Vol 11 (1) ◽

pp. 015701 ◽

Cited By ~ 13

Author(s):

Takahiro Yamada ◽

Kenta Watanabe ◽

Mikito Nozaki ◽

Hisashi Yamada ◽

Tokio Takahashi ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Quality

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Current-conduction and charge trapping properties due to bulk nitrogen in HfOxNy gate dielectric of metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.1935768 ◽

2005 ◽

Vol 86 (21) ◽

pp. 212902 ◽

Cited By ~ 16

Author(s):

Chin-Lung Cheng ◽

Kuei-Shu Chang-Liao ◽

Ching-Hung Huang ◽

Tien-Ko Wang

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Conduction

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Analysis of interface trap density of metal–oxide-semiconductor devices with Pr2O3 gate dielectric using conductance method

Microelectronic Engineering ◽

10.1016/j.mee.2010.11.032 ◽

2011 ◽

Vol 88 (6) ◽

pp. 872-876 ◽

Cited By ~ 8

Author(s):

Sanghun Jeon ◽

Sungho Park

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

Conductance Method

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Interface State Generation in p-Type Si Metal/ Oxide/ Semiconductor Capacitors due to Fowler-Nordheim Tunneling Current Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l1315 ◽

1995 ◽

Vol 34 (Part 2, No. 10B) ◽

pp. L1315-L1317 ◽

Cited By ~ 2

Author(s):

Masao Inoue ◽

Junji Shirafuji

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Stress ◽

State Generation ◽

P Type ◽

Nordheim Tunneling

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Mechanism of VFB/VTH shift in Dysprosium incorporated HfO2 gate dielectric n-Type Metal-Oxide-Semiconductor devices

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3562974 ◽

2011 ◽

Vol 29 (2) ◽

pp. 021209 ◽

Cited By ~ 2

Author(s):

Tackhwi Lee ◽

Kisik Choi ◽

Takashi Ando ◽

Dae-Gyu Park ◽

Michael A. Gribelyuk ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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