Determination of the conduction‐band offset of a single AlGaAs barrier layer using deep level transient spectroscopy

1993 ◽  
Vol 62 (22) ◽  
pp. 2813-2814 ◽  
Author(s):  
Q. S. Zhu ◽  
S. M. Mou ◽  
X. C. Zhou ◽  
Z. T. Zhong
Keyword(s):  
Conduction Band ◽  
Barrier Layer ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Conduction Band Offset ◽  
Transient Spectroscopy

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

2006 ◽  
Vol 957 ◽  
Author(s):  
Yahya Alivov ◽  
Xiao Bo ◽  
Fan Qian ◽  
Daniel Johnstone ◽  
Cole Litton ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Measured Temperature ◽  
Temperature Dependent ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

Determination of the conduction-band offset of a single AlGaAs barrier layer using DLTS

1992 ◽  
Vol 12 (2) ◽  
pp. 163-166 ◽  
Author(s):  
Q.S. Zhu ◽  
S.M. Mou ◽  
X.C. Zhou ◽  
Z.T. Zhong
Keyword(s):  
Conduction Band ◽  
Barrier Layer ◽  
Band Offset ◽  
Conduction Band Offset

Deep trap characterisation and conduction band offset determination of AI0.48In0.52As/(Ga0.7AI0.3)0.48In0.52As heterostructures

1997 ◽  
Vol 13 (11) ◽  
pp. 971-973 ◽  
Author(s):  
F. Ducroquet ◽  
G. Jacovetti ◽  
K. Rezzoug ◽  
S. Ababou ◽  
G. Guillot ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Trap ◽  
Band Offset ◽  
Conduction Band Offset
Sign in / Sign up

Export Citation Format

Share Document