Improvement of grain size and deposition rate of microcrystalline silicon by use of very high frequency glow discharge

1994 ◽  
Vol 65 (20) ◽  
pp. 2588-2590 ◽  
Author(s):  
F. Finger ◽  
P. Hapke ◽  
M. Luysberg ◽  
R. Carius ◽  
H. Wagner ◽  
...  
Keyword(s):  
Grain Size ◽  
Glow Discharge ◽  
Deposition Rate ◽  
High Frequency ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Very High

Large Grain Size and High Deposition Rate for Microcrystalline Silicon Prepared by VHF-GD

1994 ◽  
Vol 358 ◽  
Author(s):  
P. Hapke ◽  
F. Finger ◽  
M. Luysberg ◽  
R. Carius ◽  
H. Wagner
Keyword(s):  
Grain Size ◽  
Deposition Rate ◽  
High Frequency ◽  
Excitation Frequency ◽  
Chemical Vapour ◽  
High Deposition Rate ◽  
Very High Frequency ◽  
Deposition Parameters ◽  
Plasma Excitation ◽  
Very High

ABSTRACTThe growth mechanism and material properties of -type µc-Si:H prepared with plasma enhanced chemical vapour deposition in the very high frequency range is investigated. By increasing the plasma excitation frequency the grain size, deposition rate and Hall mobility can be simultaneously increased without having to adjust other deposition parameters in particular the temperature. This effect is explained by an enhanced selective etching of amorphous tissue and grain boundary regions together with a sufficient supply of growth species at high frequency plasmas.

Effect of deposition rate on the growth mechanism of microcrystalline silicon thin films using very high frequency PECVD

Optik ◽  
2019 ◽  
Vol 180 ◽  
pp. 104-112 ◽  
Author(s):  
Xinli Li ◽  
Ruimin Jin ◽  
Lihua Li ◽  
Jingxiao Lu ◽  
Yongjun Gu ◽  
...  
Keyword(s):  
Thin Films ◽  
Deposition Rate ◽  
Growth Mechanism ◽  
High Frequency ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Silicon Thin Films ◽  
Very High
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