Free-carrier absorption in microcrystalline silicon thin films prepared by very-high-frequency glow discharge

1994 ◽  
Vol 69 (2) ◽  
pp. 197-207 ◽  
Author(s):  
K. Peter ◽  
G. Willeke ◽  
K. Prasad ◽  
A. Shah ◽  
E. Bucher
Keyword(s):  
Thin Films ◽  
Glow Discharge ◽  
High Frequency ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Silicon Thin Films ◽  
Carrier Absorption ◽  
Very High

Effect of deposition rate on the growth mechanism of microcrystalline silicon thin films using very high frequency PECVD

Optik ◽  
2019 ◽  
Vol 180 ◽  
pp. 104-112 ◽  
Author(s):  
Xinli Li ◽  
Ruimin Jin ◽  
Lihua Li ◽  
Jingxiao Lu ◽  
Yongjun Gu ◽  
...  
Keyword(s):  
Thin Films ◽  
Deposition Rate ◽  
Growth Mechanism ◽  
High Frequency ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Silicon Thin Films ◽  
Very High

Microcrystalline Silicon Prepared by VHF-GD: Structure, Transport and Optical Properties

1992 ◽  
Vol 283 ◽  
Author(s):  
F. Finger ◽  
R. Carius ◽  
P. Hapke ◽  
K. Prasad ◽  
R. Fliickiger
Keyword(s):  
High Frequency ◽  
Volume Fraction ◽  
Infrared Region ◽  
Free Carrier Absorption ◽  
Transport Mechanisms ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Carrier Absorption ◽  
Very High

ABSTRACTDoped and compensated microcrystalline silicon prepared by Very High Frequency Glow Discharge has been investigated by optical spectroscopy and by temperature dependence of the electrical conductivity. Raman spectroscopy confirms the microcrystalline nature of all samples with only small changes of the crystalline volume fraction upon doping. Strong absorption in the infrared region, which correlates with the conductivity, is attributed to free carrier absorption. As a function of temperature the conductivity of all samples shows a deviation from a purely activated behaviour. Consequences of this observation for transport mechanisms are discussed.

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