Crystallographic texture change during abnormal grain growth in Cu‐Co thin films

AbstractThin films of YAG and YAG/alumina mixtures were prepared by gelling a sol across a TEM grid. The grids were heat-treated to temperatures as high as 1550°C. The resulting ceramic thin films were observed by standard and high resolution TEM techniques. Ion-milling, carbon coating, or other specimen preparation was not necessary. The phase and microstructure evolution, as well as pore structure evolution and spheroidization of film edges could be easily observed. Abnormal grain growth was observed in yttrium-aluminum garnet (YAG) films. Lattice images were taken of the matrix, abnormal grains, and structures that evolved from the abnormal rains at higher temperatures. The grain size preceding abnormal grain growth was 20–50 nm. The abnormal grains were composed of 20–50 nm subgrains with up to several degrees of misorientation. High resolution observations were also made of small (< 0.2 μm) YAG inclusions in alumina. An orientation relationship of (111)[011]alumina//(112)[021]YAGwas observed. This orientation relationship was not observed in large inclusions.

Download Full-text

Role of abnormal grain growth on the ferroelectric properties of SrBi2Ta2O9 thin films fabricated by R.F. Magnetron sputtering

Integrated Ferroelectrics ◽

10.1080/10584589808202082 ◽

1998 ◽

Vol 21 (1-4) ◽

pp. 419-428 ◽

Cited By ~ 5

Author(s):

Choelhwyi Bae ◽

Jeon-Kook Lee ◽

Si-Hyung Lee ◽

Yoon Baek Park ◽

Hyung-Jin Jung

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Grain Growth ◽

Ferroelectric Properties ◽

Abnormal Grain Growth

Download Full-text

The Effect of Strain Distribution on Abnormal Grain Growth in Cu Thin Films

MATERIALS TRANSACTIONS ◽

10.2320/matertrans.45.3033 ◽

2004 ◽

Vol 45 (10) ◽

pp. 3033-3038 ◽

Cited By ~ 20

Author(s):

Miki Moriyama ◽

Kentaro Matsunaga ◽

Toshifumi Morita ◽

Susumu Tsukimoto ◽

Masanori Murakami

Keyword(s):

Thin Films ◽

Grain Growth ◽

Strain Distribution ◽

Abnormal Grain Growth

Download Full-text

Thermomechanical Behavior and Properties of Passivated Pvd and Ecd Cu Thin Films

MRS Proceedings ◽

10.1557/proc-875-o4.5 ◽

2005 ◽

Vol 875 ◽

Cited By ~ 1

Author(s):

M. Gregoire ◽

S. Kordic ◽

P. Gergaud ◽

O. Thomas ◽

M. Ignat

Keyword(s):

Thin Films ◽

Thermal Cycling ◽

Grain Growth ◽

Impurity Content ◽

Thermomechanical Behavior ◽

Temperature Curve ◽

Cu Films ◽

Texture Change ◽

Cu Film ◽

Electrochemically Deposited

AbstractThe thermomechanical behavior is investigated of SiCN-encapsulated blanket Physical Vapor Deposited (PVD) and Electrochemically Deposited (ECD) Cu films. At lower ECD Cu film thicknesses an anomalous shape and a tail of the stress-temperature curve are observed, which are not caused by impurities at the interfaces, but are correlated to highly textured microstructure. Repeated thermal cycling of up to 400 °C does not markedly change the texture of the films, but a significant texture change takes place with increasing ECD Cu thickness. Thermal cycling induces grain growth for thicker films only. Impurity content and distribution in the PVD films do not change due to cycling.

Download Full-text

Annealing Textures of Thin Films and Copper Interconnects

Materials Science Forum ◽

10.4028/www.scientific.net/msf.475-479.1 ◽

2005 ◽

Vol 475-479 ◽

pp. 1-8 ◽

Cited By ~ 1

Author(s):

Dong Nyung Lee

Keyword(s):

Thin Films ◽

Grain Boundary ◽

Grain Growth ◽

Fiber Type ◽

Boundary Energy ◽

Boundary Surface ◽

Strain Energy Release ◽

Abnormal Grain Growth ◽

Copper Interconnects ◽

Geometric Constraints

Vapor-, electro-, and electroless-deposits have usually strong fiber textures. When annealed, the deposits undergo recrystallization or abnormal grain growth to reduce their energy stored during deposition. The driving force for recrystallization is mainly caused by dislocations, whereas that for abnormal grain growth is due to the grain boundary, surface, interface, and strain energies. During recrystallization and abnormal grain growth, the texture change can take place. The recrystallization and abnormal grain growth textures are in general of fiber type. However, copper interconnects are subjected to non-planar stress state due to geometric constraints during room temperature and/or elevated temperature annealing. The annealing textures of the thin films and copper interconnects are discussed in terms of the minimization of the surface, interface, and strain energies, the grain boundary energy and mobility, and the strain-energy-release maximization.

Download Full-text

Abnormal Grain Growth in Thin Films due to Anisotropy of Free-Surface Energies

Materials Science Forum ◽

10.4028/www.scientific.net/msf.94-96.543 ◽

1992 ◽

Vol 94-96 ◽

pp. 543-550 ◽

Cited By ~ 11

Author(s):

H.J. Frost ◽

C.V. Thompson ◽

D.T. Walton

Keyword(s):

Thin Films ◽

Free Surface ◽

Grain Growth ◽

Abnormal Grain Growth ◽

Surface Energies

Download Full-text

Abnormal grain growth of sputtered CuNi(Mn) thin films

Journal of Materials Research ◽

10.1557/jmr.2000.0153 ◽

2000 ◽

Vol 15 (5) ◽

pp. 1062-1068 ◽

Cited By ~ 3

Author(s):

W. Brückner ◽

V. Weihnacht ◽

W. Pitschke ◽

J. Thomas ◽

S. Baunack

Keyword(s):

Thin Films ◽

Grain Growth ◽

Abnormal Grain Growth ◽

Temperature Cycle ◽

X Ray Diffraction ◽

Transmission Electron ◽

Columnar Grains ◽

Maximum Temperatures ◽

Film Substrate ◽

20 Nm

The evolution in both stress and microstructure was investigated on sputtered Cu0.57Ni0.42Mn0.01thin films of 400 nm thickness during the first temperature cycle up to 550 °C. Samples from stress–temperature measurements up to various maximum temperatures were analyzed by x-ray diffraction, scanning and transmission electron microscopy, and Auger electron spectroscopy. The columnar grains with lateral diameters of about 20 nm in the as-deposited state coarsen to about 400 nm above 300 °C. Probably due to the impurity (Mn) drag effect, the coarsening occurs by abnormal grain growth rather than by normal grain growth, starting near the film–substrate interface. The stress development results from a combination of densification due to grain growth and plastic stress relaxation.

Download Full-text

Abnormal grain growth in aluminum alloy thin films

Journal of Applied Physics ◽

10.1063/1.348452 ◽

1991 ◽

Vol 69 (7) ◽

pp. 3929-3940 ◽

Cited By ~ 82

Author(s):

Hai P. Longworth ◽

C. V. Thompson

Keyword(s):

Thin Films ◽

Aluminum Alloy ◽

Grain Growth ◽

Abnormal Grain Growth

Download Full-text

Texture Change during Grain Growth in Non-Oriented Electrical Steel

Materials Science Forum ◽

10.4028/www.scientific.net/msf.753.329 ◽

2013 ◽

Vol 753 ◽

pp. 329-332

Author(s):

Yoshihiro Arita ◽

Yoshiyuki Ushigami ◽

Kenichi Murakami ◽

Kohsaku Ushioda

Keyword(s):

Grain Growth ◽

Electrical Steel ◽

Abnormal Grain Growth ◽

Initial Structure ◽

Rolled Steel ◽

Ebsd Data ◽

Texture Change ◽

Average Grain Size ◽

Cold Rolled ◽

Initial Texture

Texture change during grain growth in Fe-3%Si non-oriented electrical steel was investigated. Cold rolled steel, 0.35mm in thickness, was annealed and recrystallized as an initial structure. Normal grain growth and abnormal grain growth occurred by additional annealing. {111} was dominant in the initial texture. However {100} component, which was not in majority in the initial structure, became stronger after normal grain growth. It was revealed that an average grain size of {100} in the initial structure was bigger than those of other components by analysis of the EBSD data,. Therefore, it is concluded that {100} strengthened after normal grain growth due to its size advantage. On the other hand, {111} components became more stronger after abnormal grain growth. It is inferred that another mechanism of the texture change worked in abnormal grain growth.

Download Full-text