Role of abnormal grain growth on the ferroelectric properties of SrBi2Ta2O9 thin films fabricated by R.F. Magnetron sputtering

1998 ◽  
Vol 21 (1-4) ◽  
pp. 419-428 ◽  
Author(s):  
Choelhwyi Bae ◽  
Jeon-Kook Lee ◽  
Si-Hyung Lee ◽  
Yoon Baek Park ◽  
Hyung-Jin Jung
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Grain Growth ◽  
Ferroelectric Properties ◽  
Abnormal Grain Growth

Bi4-xLaxTi3O12 Ferroelectric Thin Films Prepared by RF Magnetron Sputtering

2008 ◽  
Vol 368-372 ◽  
pp. 109-111
Author(s):  
Xing Ao Li ◽  
Zu Li Liu ◽  
An You Zuo ◽  
Zuo Bin Yuan ◽  
Jian Ping Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Grain Growth ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Growth Behavior ◽  
Ferroelectric Thin Films ◽  
Si Substrates ◽  
Grain Growth Behavior

Bi4-xLaxTi3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4-xLaxTi3O12 (x=0.5, 0.75, 1) targets with 50-mm diameter and 5-mm thickness. The effects of La contents on microstructure and ferroelectric properties of Bi4-xLaxTi3O12 thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were found to be dependent on the La contents in the BLT thin films.

Effects of barrier layer and annealing on abnormal grain growth in copper thin films

1994 ◽  
Vol 76 (8) ◽  
pp. 4516-4523 ◽  
Author(s):  
E. M. Zielinski ◽  
R. P. Vinci ◽  
J. C. Bravman
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Barrier Layer ◽  
Abnormal Grain Growth

Role of carbon in the formation of hard Ge1−xCx thin films by reactive magnetron sputtering

2011 ◽  
Vol 406 (13) ◽  
pp. 2658-2662 ◽  
Author(s):  
Chaoquan Hu ◽  
Liang Qiao ◽  
Hongwei Tian ◽  
Xianyi Lu ◽  
Qing Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron

A Role of Low Energy Grain Boundaries in the Abnormal Grain Growth in Fe-3%Si Alloy

2011 ◽  
Vol 127 ◽  
pp. 89-94 ◽  
Author(s):  
Ye Chao Zhu ◽  
Jiong Hui Mao ◽  
Fa Tang Tan ◽  
Xue Liang Qiao
Keyword(s):  
Grain Boundaries ◽  
Grain Growth ◽  
Electron Backscatter Diffraction ◽  
Dominant Role ◽  
Coincidence Site Lattice ◽  
Diffraction Method ◽  
Abnormal Grain Growth ◽  
Low Energy ◽  
Backscatter Diffraction

Low energy grain boundaries were considered to be important in abnormal grain growth by theoretical deduction. The disorientation angles and coincidence site lattice grain boundaries distribution of more than 20 Goss grains and their neighboring matrix grains in primary recrystallized Fe-3%Si alloy were investigated using an electron backscatter diffraction method. It was found that the frequency of low energy grain boundaries of Goss grains which are more likely to abnormally grow are higher than their neighboring matrix grains, which indicated that low energy grain boundaries play a dominant role in the abnormal grain growth of Fe-3%Si alloy. The result meets well with the abnormal grain growth theory.

scholarly journals Role of β(FeAl) nanoparticles in abnormal grain growth in the annealing of cast Cu-Al-Mn-Fe shape memory alloys

2020 ◽  
Vol 30 (4) ◽  
pp. 510-516
Author(s):  
Shuiyuan Yang ◽  
Xinyu Qing ◽  
Jixun Zhang ◽  
Lipeng Guo ◽  
Shen Hong ◽  
...  
Keyword(s):  
Shape Memory Alloys ◽  
Shape Memory ◽  
Grain Growth ◽  
Abnormal Grain Growth
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