New properties and applications of electron‐beam evaporated silicon in submicron elevated source/drain metal‐oxide‐semiconductor field‐effect transistors

Oxide Semiconductor ◽

Elevated Source

Effects of Electron Beam Damage on the Electrical Characteristics of n-type Metal-Oxide-Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.1223 ◽

1994 ◽

Vol 33 (Part 1, No. 3A) ◽

pp. 1223-1227 ◽

Cited By ~ 2

Author(s):

Young Jin Jeon ◽

Sin-Chong Park ◽

Soung Soon Chun

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Beam Damage

A Comparative Study of n+/p Junction Formation for Deep Submicron Elevated Source/Drain Metal Oxide Semiconductor Field Effect Transistors

Journal of The Electrochemical Society ◽

10.1149/1.1838066 ◽

1997 ◽

Vol 144 (10) ◽

pp. 3659-3664 ◽

Cited By ~ 5

Author(s):

J. Sun ◽

R. F. Bartholomew ◽

K. Bellur ◽

A. Srivastava ◽

C. M. Osburn ◽

...

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Deep Submicron ◽

Oxide Semiconductor ◽

Junction Formation ◽

Elevated Source

Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator

Applied Physics Letters ◽

10.1063/1.4983091 ◽

2017 ◽

Vol 110 (20) ◽

pp. 203502 ◽

Cited By ~ 26

Author(s):

J. W. Liu ◽

H. Oosato ◽

M. Y. Liao ◽

Y. Koide

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Enhancement Mode

Defect Characterization in Metal-Oxide-Semiconductor Field-Effect-Transistors with Trench Gates by Electron Beam-Induced Current Technique

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.63-64.407 ◽

1998 ◽

Vol 63-64 ◽

pp. 407-412 ◽

Cited By ~ 3

Author(s):

H. Tomokage ◽

Y. Ishiwata ◽

H. Souno ◽

Masahiro Kawakami ◽

N. Sonoda

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Defect Characterization ◽

Induced Current ◽

Electron Beam Induced Current ◽

Trench Gates

Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.4142 ◽

2003 ◽

Vol 42 (Part 1, No. 6B) ◽

pp. 4142-4146 ◽

Cited By ~ 16

Author(s):

Yongxun Liu ◽

Kenichi Ishii ◽

Toshiyuki Tsutsumi ◽

Meishoku Masahara ◽

Hidenori Takashima ◽

...

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Electron Beam Lithography ◽

Field Effect ◽

Oxide Semiconductor ◽

Double Gate

Parasitic Resistance Considerations of Using Elevated Source/Drain Technology for Deep Submicron Metal Oxide Semiconductor Field Effect Transistors

Journal of The Electrochemical Society ◽

10.1149/1.1838607 ◽

1998 ◽

Vol 145 (6) ◽

pp. 2131-2137 ◽

Cited By ~ 4

Author(s):

J. Sun ◽

R. F. Bartholomew ◽

K. Bellur ◽

A. Srivastava ◽

C. M. Osburn ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Deep Submicron ◽

Oxide Semiconductor ◽

Parasitic Resistance ◽

Elevated Source

Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Cost Effective ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Electrical Characteristics

Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Inversion Channel

Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Cited By ~ 1

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Heterostructure Field Effect Transistors

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽