Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses

Vapor Phase Epitaxy ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Electron mobility enhancement in metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors by control of surface morphology of spacer layer

10.7567/jjap.57.01ad01 ◽

2017 ◽

Vol 57 (1S) ◽

pp. 01AD01 ◽

Cited By ~ 1

Author(s):

Atsushi Yamada ◽

Tetsuro Ishiguro ◽

Junji Kotani ◽

Norikazu Nakamura

Keyword(s):

Surface Morphology ◽

Vapor Phase ◽

Electron Mobility ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Spacer Layer

AlGaAs/GaAs double‐heterojunction high electron mobility transistors grown by low‐pressure organometallic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.345244 ◽

1990 ◽

Vol 67 (1) ◽

pp. 550-552 ◽

Cited By ~ 3

Author(s):

Rong‐Ting Huang ◽

Yung‐Yi Tu ◽

Dumrong Kasemset ◽

N. Nouri ◽

C. Colvard ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

High Electron ◽

Organometallic Vapor Phase Epitaxy ◽

High Electron Mobility ◽

Double Heterojunction

Advantages of the AlGaN spacer in InAlN high-electron-mobility transistors grown using metalorganic vapor phase epitaxy

10.7567/jjap.55.05fk03 ◽

2016 ◽

Vol 55 (5S) ◽

pp. 05FK03 ◽

Cited By ~ 2

Author(s):

Atsushi Yamada ◽

Tetsuro Ishiguro ◽

Junji Kotani ◽

Shuichi Tomabechi ◽

Norikazu Nakamura ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

Applied Physics Letters ◽

10.1063/1.1418452 ◽

2001 ◽

Vol 79 (21) ◽

pp. 3527-3529 ◽

Cited By ~ 197

Author(s):

P. B. Klein ◽

S. C. Binari ◽

K. Ikossi ◽

A. E. Wickenden ◽

D. D. Koleske ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Current Collapse

InAlAs/InGaAs high electron mobility transistors on low temperature InAlAs buffer layers by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.113137 ◽

1995 ◽

Vol 66 (2) ◽

pp. 212-214 ◽

Cited By ~ 12

Author(s):

N. Pan ◽

J. Elliott ◽

H. Hendriks ◽

L. Aucoin ◽

P. Fay ◽

...

Keyword(s):

Low Temperature ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors

10.7567/jjap.52.04cf02 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CF02 ◽

Cited By ~ 6

Author(s):

Masanobu Hiroki ◽

Noriyuki Watanabe ◽

Narihiko Maeda ◽

Haruki Yokoyama ◽

Kazuhide Kumakura ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Optimization of buffer layers for AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors by atmospheric pressure metalorganic chemical vapor deposition

Journal of Electronic Materials ◽

10.1007/bf02655837 ◽

1992 ◽

Vol 21 (2) ◽

pp. 199-203 ◽

Cited By ~ 2

Author(s):

N. Pan ◽

G. S. Jackson ◽

J. Carter ◽

H. Hendriks ◽

S. K. Brierley

Keyword(s):

Vapor Deposition ◽

Atmospheric Pressure ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Device Characteristics of Metalorganic Chemical Vapor Deposition-Grown InAlN/GaN High-Electron-Mobility Transistors on AlN/Sapphire Template

10.1143/jjap.48.04c102 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C102 ◽

Cited By ~ 3

Author(s):

Josephine Selvaraj ◽

Susai Lawrence Selvaraj ◽

Makoto Miyoshi ◽

Yoshitaka Kuraoka ◽

Mitsuhiro Tanaka ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron ◽

High Electron Mobility ◽

AlGaAs/GaAs and AlGaAs/InGaAs/GaAs High Electron Mobility Transistors Grown by Metalorganic Vapor Phase Epitaxy Using Tertiarybutylarsine

10.1143/jjap.30.l1718 ◽

1991 ◽

Vol 30 (Part 2, No. 10A) ◽

pp. L1718-L1721 ◽

Cited By ~ 7

Author(s):

Toshihide Kikkawa ◽

Tatsuya Ohori ◽

Eizou Mitani ◽

Masahisa Suzuki ◽

Hitoshi Tanaka ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors

Solid-State Electronics ◽

10.1016/s0038-1101(02)00473-2 ◽

2003 ◽

Vol 47 (6) ◽

pp. 1075-1079 ◽

Cited By ~ 20

Author(s):

M.A. Mastro ◽

D. Tsvetkov ◽

V. Soukhoveev ◽

A. Usikov ◽

V. Dmitriev ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

Vapor Phase Epitaxy ◽

Hydride Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽