Selection of the residual gas pressure suitable for operating a positive ion source of thermal ionization type

1998 ◽  
Vol 69 (2) ◽  
pp. 1182-1184 ◽  
Author(s):  
Hiroyuki Kawano ◽  
Keiko Ogasawara ◽  
Hajime Kobayashi ◽  
Akihide Tanaka ◽  
Tomoko Takahashi ◽  
...  
Keyword(s):  
Ion Source ◽  
Gas Pressure ◽  
Thermal Ionization ◽  
Residual Gas ◽  
Positive Ion ◽  
Selection Of

How to select the best condition for operating a positive ion source of molecular beam surface ionization typea)

1994 ◽  
Vol 65 (5) ◽  
pp. 1766-1769 ◽  
Author(s):  
Hiroyuki Kawano ◽  
Katsushi Ohgami ◽  
Kiyohiko Funato ◽  
Junji Nakamura
Keyword(s):  
Molecular Beam ◽  
Ion Source ◽  
Surface Ionization ◽  
Beam Surface ◽  
Positive Ion

Characteristics of a High Current P.I.G. Ion Source at Low Gas Pressure

1967 ◽  
Vol 14 (3) ◽  
pp. 53-59 ◽  
Author(s):  
Mohamed E. Abdelaziz ◽  
Ahmed M. Ghander
Keyword(s):  
Ion Source ◽  
Gas Pressure ◽  
High Current

Very Thick Coherently Strained GexSi1−x Layers Grown in a Narrow Temperature Window

1991 ◽  
Vol 220 ◽  
Author(s):  
C. H. Chern ◽  
K. L. Wang ◽  
G. Bai ◽  
M. -A. Nicolet
Keyword(s):  
Growth Temperature ◽  
Strain Relaxation ◽  
Gas Pressure ◽  
High Density ◽  
Misfit Dislocations ◽  
High Quality ◽  
Strained Layers ◽  
Temperature Window ◽  
Residual Gas

ABSTRACTStrain relaxation of GexSi1−x layers is studied as a function of growth temperature. Extremely thick coherently strained layers whose thicknesses exceed more than fifty times of the critical thicknesses predicted by Matthews and Blakeslee's model were successfully grown by MBE. There exits a narrow temperature window from 310 °C to 350 °C for growing this kind of high quality thick strained layers. Below this temperature window, the layers are poor in quality as indicated from RHEED patterns. Above this window, the strain of the layers relaxes very fast accompanied with a high density of misfit dislocations as the growth temperature increases. Moreover, for samples grown in this temperature window, the strain relaxation shows a dependence of the residual gas pressure, which has never been reported before.

Effects of gas pressure and discharge current on beam composition in a magnetron discharge ion source

2019 ◽  
Vol 90 (11) ◽  
pp. 113312
Author(s):  
Alexey Vizir ◽  
Efim Oks ◽  
Maxim Shandrikov ◽  
Bin Zhang ◽  
Georgy Yushkov
Keyword(s):  
Discharge Current ◽  
Ion Source ◽  
Gas Pressure ◽  
Magnetron Discharge

Ammonia in the Ion-Source. III. Clustering With N-Oxides, Sulfoxides and Sulfones

1986 ◽  
Vol 39 (12) ◽  
pp. 2161 ◽  
Author(s):  
RG Gillis
Keyword(s):  
Chemical Ionization ◽  
Low Pressure ◽  
Ion Source ◽  
Unimolecular Decomposition ◽  
Positive Ion

Under positive ion chemical ionization conditions, with ammonia as reagent gas at relatively low pressure, N-oxides, sulfoxides and sulfones form clusters with a proton and one or more ammonia molecules; these clusters can be represented as [M+H]+, [M+NH4]+, [M+N2H7]+, [2M+H]+ and [2M+NH4]+. The unimolecular decomposition of the clusters can be followed by the accompanying metastable peaks.

On the Influence of Residual Gas Pressure on the MS-Induced Anisotropy in Thin Films

1961 ◽  
Vol 1 (7) ◽  
pp. K147-K149 ◽  
Author(s):  
Z. Málek ◽  
V. Kamberský ◽  
W. Schüppel
Keyword(s):  
Thin Films ◽  
Gas Pressure ◽  
Induced Anisotropy ◽  
Residual Gas
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