Observation of multiple defect states at silicon–silicon nitride interfaces fabricated by low-frequency plasma-enhanced chemical vapor deposition

1997 ◽  
Vol 71 (2) ◽  
pp. 252-254 ◽  
Author(s):  
Jan Schmidt ◽  
Frank M. Schuurmans ◽  
Wim C. Sinke ◽  
Stefan W. Glunz ◽  
Armin G. Aberle
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Defect States ◽  
Frequency Plasma ◽  
Multiple Defect ◽  
Silicon Silicon

Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition: Effect of H2 and Ar dilution

2006 ◽  
Vol 21 (1) ◽  
pp. 88-104 ◽  
Author(s):  
A. Kosarev ◽  
A. Torres ◽  
Y. Hernandez ◽  
R. Ambrosio ◽  
C. Zuniga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Relative Rate ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Optical Measurements ◽  
Conduction Band Edge ◽  
Frequency Plasma

We have studied structure and electrical properties of Si1−YGeY:H films deposited by low-frequency plasma-enhanced chemical vapor deposition over the entire composition range from Y = 0 to Y = 1. The deposition rate of the films and their structural and electrical properties were measured for various ratios of the germane/silane feed gases and with and without dilution by Ar and by H2. Structure and composition was studied by Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS), and Fourier transform infrared (FTIR) spectroscopy. Surface morphology was characterized by atomic force microscopy (AFM). We found that the deposition rate increased with Y, maximizing at Y = 1 without dilution. The relative rate of Ge and Si incorporation is affected by dilution. Hydrogen preferentially bonds to silicon. Hydrogen content decreases for increasing Y. In addition, optical measurements showed that as Y goes for 0 to 1, the Fermi level moves from mid gap to the conduction band edge; i.e., the films become more n-type. No correlation was found between the pre-exponential and the activation energy of conductivity. The behavior of the conductivity γ-factor suggests a local minimum in the density of states at E ≈ 0.33 eV for the films grown with or without H-dilution and E ≈ 0.25 eV for the films with Ar dilution.

Particle formation in SiOx film deposition by low frequency plasma enhanced chemical vapor deposition

1998 ◽  
Vol 83 (1) ◽  
pp. 554-560 ◽  
Author(s):  
Tomoyo Yamaguchi ◽  
Naoshi Sakamoto ◽  
Mitsuo Shimozuma ◽  
Masaki Yoshino ◽  
Hiroaki Tagashira
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Particle Formation ◽  
Film Deposition ◽  
Frequency Plasma
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