Simulations of quantized inversion layer electron transport in 6H–Silicon carbide metal oxide semiconductor structures

Applied Physics Letters ◽

10.1063/1.121307 ◽

1998 ◽

Vol 72 (17) ◽

pp. 2156-2158 ◽

Author(s):

R. P. Joshi

Keyword(s):

Silicon Carbide ◽

Electron Transport ◽

Metal Oxide ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.1009 ◽

2002 ◽

Vol 389-393 ◽

pp. 1009-1012 ◽

Author(s):

Masahito Yoshikawa ◽

Mirei Satoh ◽

Takeshi Ohshima ◽

Hisayoshi Itoh

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Semiconductor Structures

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Inversion Layer Electron Transport in 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Silicon Carbide ◽

10.1002/9783527629077.ch11 ◽

2011 ◽

pp. 267-290

Author(s):

Vinayak Tilak

Keyword(s):

Electron Transport ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Hot electron transport through metal–oxide–semiconductor structures studied by ballistic electron emission spectroscopy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587821 ◽

1995 ◽

Vol 13 (4) ◽

pp. 1830 ◽

Author(s):

R. Ludeke

Keyword(s):

Electron Transport ◽

Metal Oxide ◽

Electron Emission ◽

Emission Spectroscopy ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Semiconductor Structures ◽

Ballistic Electron ◽

Hot Electron Transport

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Parameter analysis for gate metal-oxide-semiconductor structures of ion-implanted 4H silicon carbide metal-semiconductor field-effect transistors

Chinese Physics B ◽

10.1088/1674-1056/19/9/097106 ◽

2010 ◽

Vol 19 (9) ◽

pp. 097106

Author(s):

Wang Shou-Guo ◽

Zhang Yi-Men ◽

Zhang Yu-Ming

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Parameter Analysis ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

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Monte Carlo modeling of electron transport in a Si metal‐oxide‐semiconductor inversion layer including quantum state and bulk scattering

Journal of Applied Physics ◽

10.1063/1.349568 ◽

1991 ◽

Vol 70 (3) ◽

pp. 1522-1530 ◽

Author(s):

Syunji Imanaga ◽

Yoshinori Hayafuji

Keyword(s):

Monte Carlo ◽

Electron Transport ◽

Metal Oxide ◽

Quantum State ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Monte Carlo Modeling ◽

Bulk Scattering

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Thermal oxidation and electrical properties of silicon carbide metal‐oxide‐semiconductor structures

Journal of Applied Physics ◽

10.1063/1.353270 ◽

1993 ◽

Vol 73 (3) ◽

pp. 1279-1283 ◽

Author(s):

N. Singh ◽

A. Rys

Keyword(s):

Silicon Carbide ◽

Electrical Properties ◽

Metal Oxide ◽

Thermal Oxidation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Image force effects and the dielectric response of SiO2 in electron transport across metal–oxide–semiconductor structures

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580708 ◽

1997 ◽

Vol 15 (3) ◽

pp. 784-789 ◽

Author(s):

H. J. Wen ◽

R. Ludeke ◽

D. M. Newns ◽

S. H. Lo

Keyword(s):

Electron Transport ◽

Metal Oxide ◽

Dielectric Response ◽

Image Force ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Inversion layer electron transport in 4H-SiC metal-oxide-semiconductor field-effect transistors

physica status solidi (a) ◽

10.1002/pssa.200925164 ◽

2009 ◽

Vol 206 (10) ◽

pp. 2391-2402 ◽

Author(s):

Vinayak Tilak

Keyword(s):

Electron Transport ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Spatially Resolved Transport Studies and Microscopy of Ultrathin Metal-Oxide-Semiconductor Structures

10.21236/ada329531 ◽

1997 ◽

Author(s):

R. Ludeke

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Spatially Resolved ◽

Transport Studies

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Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1378329 ◽

2001 ◽

Vol 90 (2) ◽

pp. 866-870 ◽

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Self Consistent ◽

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