Metalorganic molecular-beam-epitaxy-grown In0.77Ga0.23As/InGaAs multiple quantum well lasers emitting at 2.07 μm wavelength

Applied Physics Letters ◽

10.1063/1.121561 ◽

1998 ◽

Vol 72 (24) ◽

pp. 3106-3108 ◽

Author(s):

Manabu Mitsuhara ◽

Matsuyuki Ogasawara ◽

Mamoru Oishi ◽

Hideo Sugiura

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Metalorganic Molecular Beam Epitaxy

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Low‐threshold operation of AlGaAs/GaAs multiple quantum well lasers grown on Si substrates by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.98481 ◽

1987 ◽

Vol 51 (4) ◽

pp. 221-223 ◽

Author(s):

Tow C. Chong ◽

Clifton G. Fonstad

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Si Substrates ◽

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Electroabsorption and modulator characteristics of InGaAsP multiple quantum well laser structures grown by laser-assisted metalorganic molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90384-0 ◽

1994 ◽

Vol 136 (1-4) ◽

pp. 64-68 ◽

Author(s):

H. Sugiura ◽

K. Wakita ◽

R. Iga ◽

T. Yamada

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Laser ◽

Metalorganic Molecular Beam Epitaxy ◽

Multiple Quantum Well Laser

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Low‐threshold 1.3‐μm wavelength, InGaAsP strained‐layer multiple quantum well lasers grown by gas source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.112192 ◽

1994 ◽

Vol 65 (7) ◽

pp. 892-894 ◽

Author(s):

Guang‐Jye Shiau ◽

Chih‐Ping Chao ◽

Paul E. Burrows ◽

Stephen R. Forrest

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Strained Layer ◽

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Molecular-beam epitaxy of phosphor-free 1.3 μm InAlGaAs multiple-quantum-well lasers on InP (100)

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2737434 ◽

2007 ◽

Vol 25 (3) ◽

pp. 1090 ◽

Author(s):

W. Li ◽

D. Moscicka ◽

A. Torfi ◽

W. I. Wang

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum

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High-performance long-wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:20070279 ◽

2007 ◽

Vol 43 (8) ◽

pp. 454 ◽

Author(s):

G. Adolfsson ◽

S.M. Wang ◽

M. Sadeghi ◽

A. Larsson

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

High Performance ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Long Wavelength

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Effects of carbon impurity on GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings ◽

10.1109/commad.1996.610065 ◽

2002 ◽

Author(s):

D.H. Zhang ◽

C.Y. Li ◽

S.F. Yoon

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Carbon Impurity

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Yellow (5735 Å) emission GaInP multiple quantum well lasers grown by gas source molecular-beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588157 ◽

1995 ◽

Vol 13 (2) ◽

pp. 762 ◽

Author(s):

A. C. Chen

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

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GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy

ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings ◽

10.1109/smelec.1996.616478 ◽

2002 ◽

Author(s):

D.H. Zhang ◽

C.Y. Li ◽

S.F. Yoon ◽

A. Raman

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum

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Channeled‐substrate GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.95326 ◽

1984 ◽

Vol 45 (6) ◽

pp. 606-608 ◽

Author(s):

Yao‐Hwa Wu ◽

Michael Werner ◽

Shyh Wang

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum

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InGaAs/GaAs/InGaP multiple‐quantum‐well lasers prepared by gas‐source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.105858 ◽

1991 ◽

Vol 59 (22) ◽

pp. 2781-2783 ◽

Author(s):

J. M. Kuo ◽

Y. K. Chen ◽

M. C. Wu ◽

M. A. Chin

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

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