Binary-collision modeling of ion-induced stress relaxation in cubic BN and amorphous C thin films

2007 ◽  
Vol 90 (18) ◽  
pp. 181910 ◽  
Author(s):  
B. Abendroth ◽  
H. U. Jäger ◽  
W. Möller ◽  
M. Bilek
Polymer ◽  
2001 ◽  
Vol 42 (1) ◽  
pp. 319-328 ◽  
Author(s):  
H. Chung ◽  
C. Lee ◽  
H. Han

2009 ◽  
Vol 57 (4) ◽  
pp. 1209-1219 ◽  
Author(s):  
R. Gremaud ◽  
M. Gonzalez-Silveira ◽  
Y. Pivak ◽  
S. de Man ◽  
M. Slaman ◽  
...  

2000 ◽  
Vol 76 (4) ◽  
pp. 430-432 ◽  
Author(s):  
C. K. Chiang ◽  
W. E. Wallace ◽  
G. W. Lynn ◽  
D. Feiler ◽  
W. Xia

Author(s):  
N. Rozhanski ◽  
V. Lifshitz

Thin films of amorphous Ni-Nb alloys are of interest since they can be used as diffusion barriers for integrated circuits on Si. A native SiO2 layer is an effective barrier for Ni diffusion but it deformation during the crystallization of the alloy film lead to the appearence of diffusion fluxes through it and the following formation of silicides. This study concerns the direct evidence of the action of stresses in the process of the crystallization of Ni-Nb films on Si and the structure of forming NiSi2 islands.


2011 ◽  
Vol 417 (1-3) ◽  
pp. 104-107 ◽  
Author(s):  
N.V. Luzginova ◽  
M. Jong ◽  
J.W. Rensman ◽  
J.B.J. Hegeman ◽  
J.G. van der Laan

2021 ◽  
pp. 117385
Author(s):  
Quentin Hérault ◽  
Iryna Gozhyk ◽  
Matteo Balestrieri ◽  
Hervé Montigaud ◽  
Sergey Grachev ◽  
...  

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