Structural analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN

2000 ◽  
Vol 88 (11) ◽  
pp. 6364-6368 ◽  
Author(s):  
S.-H. Lim ◽  
W. Swider ◽  
J. Washburn ◽  
Z. Liliental-Weber
Keyword(s):  
Structural Analysis ◽  
Ohmic Contacts ◽  
Interfacial Layers

Microstructural Analysis of Ti/Ni Bilayer Ohmic Contacts on 4H-SiC Layers

2019 ◽  
Vol 963 ◽  
pp. 494-497
Author(s):  
Vinoth Kumar Sundaramoorthy ◽  
Lukas Kranz ◽  
Giovanni Alfieri
Keyword(s):  
Structural Analysis ◽  
Diffraction Pattern ◽  
Ohmic Contacts ◽  
Microstructural Analysis ◽  
Carbon Segregation ◽  
Film Interface

The micro-structural analysis of Ti/Ni bilayer as Ohmic contacts to n-type 4H-SiC is reported. There was no carbon segregation at the interface between the NiSi layer and the 4H-SiC layer for Ti/Ni contacts, unlike pure Ni contacts. The diffraction pattern image shows the presence of the cubic NiSi film which grows on the SiC surface. The film interface with the SiC was uniform and more planar. An optimized contact in terms of contact morphology was achieved using a bilayer contact Ti/Ni (20/100nm) annealed at 1100 °C for 5 minutes in vacuum.

scholarly journals Structural analysis of Ni3Si2by EDT and dynamical refinement

2014 ◽  
Vol 70 (a1) ◽  
pp. C372-C372
Author(s):  
Cinthia Corrêa ◽  
Mariana Klementová ◽  
Lukáš Palatinus
Keyword(s):  
Structural Analysis ◽  
Electron Diffraction ◽  
Ohmic Contacts ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Diffraction Theory ◽  
Oxide Semiconductor ◽  
Metal Silicides ◽  
Precession Electron Diffraction ◽  
Low Toxicity

Transition metal silicides are known for properties such as low resistivity, high melting point, low cost and low toxicity, which are of great interest for applications in current silicon nanotechnology such as nano-complementary metal-oxide semiconductor (CMOS) devices, photovoltaics and ohmic contacts. In all these technologies the materials are used on nanoscale. To gain better insight into their properties, it is necessary to be able to determine the structure of the nanoparticles of these materials. Electron diffraction tomography combined with the precession electron diffraction (PED) are ideal techniques for structural analysis of nanocrystals. In this work Ni3Si2 nanowires with diameter of 25 nm were analyzed by EDT both with and without PED. The structure was refined using the kinematical and dynamical diffraction theory. The results show that the best results can be obtained of EDT and PED.

Au Ohmic Contacts to P-Type Hg1-xCdxte Utilizing Thin Interfacial Layers

1990 ◽  
Vol 181 ◽  
Author(s):  
V. Krishnamurthy ◽  
A. Simmons ◽  
C. R. Helms
Keyword(s):  
Interfacial Layer ◽  
Ohmic Contacts ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Interfacial Chemistry ◽  
Interfacial Layers ◽  
Ohmic Behavior ◽  
P Type ◽  
Thin Plasma

ABSTRACTOhmic behavior is observed in electroless Au contacts to p -type Hg1−xCdxTe. Our investigation of the interfacial chemistry of such contacts suggest that this ohmic behavior may be due to the presence of a Te,O, and CI layer. To verify this correlation with interfacial chemistry, thin plasma oxide layers were used in evaporated Au contacts. The annealed plasma oxidized contacts exhibited low contact resistances. This behavior was attributed to a low interface state density at the interfacial layer/Hg1−xCdxTe interface. In comparison, as-deposited and annealed Au contacts without a thin interfacial layer were rectifying with a large barrier height.

Structural analysis of Au–Ni–Ge and Au–Ag–Ge alloyed ohmic contacts on modulation‐doped AlGaAs–GaAs heterostructures

1986 ◽  
Vol 60 (2) ◽  
pp. 677-680 ◽  
Author(s):  
T. K. Higman ◽  
M. A. Emanuel ◽  
J. J. Coleman ◽  
S. J. Jeng ◽  
C. M. Wayman
Keyword(s):  
Structural Analysis ◽  
Ohmic Contacts

Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon

2019 ◽  
Vol 963 ◽  
pp. 485-489
Author(s):  
Monia Spera ◽  
Giuseppe Greco ◽  
Raffaella Lo Nigro ◽  
Salvatore di Franco ◽  
Domenico Corso ◽  
...  
Keyword(s):  
Structural Analysis ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Specific Contact ◽  
Fabrication And Characterization ◽  
P Type

This paper reports on the formation and characterization of Ohmic contacts to n-type and p-type type 3C-SiC layers grown on silicon substrates. In particular, Ohmic contact behavior was obtained either using Ni or Ti/Al/Ni layers annealed at 950°C. The values of the specific contact resistance ρc estimated by means of circular TLM (C-TLM) structures varied in the range ~ 10-3-10-5 Ωcm2, depending on the doping level of the 3C-SiC layer. A structural analysis performed by X-Ray Diffraction (XRD) allowed to identify the main phases formed upon annealing, i.e., Ni2Si and Al3Ni2. The morphology of the reacted contacts depended on that of the underlying substrate. The results can be useful for the development of a variety of devices on the cubic 3C-SiC polytype.

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