Practical limits of high-voltage thyristors on wide band-gap materials

In this paper we present a new test bench called micro-OBIC used to characterized wide band gap semi-conductor. Micro-OBIC allows to get an Optical Beam Induced Current (OBIC) signal with a microscopic spatial resolution. We used micro-OBIC to characterize peripheral protection such as MESA, JTE or JTE in high voltage SiC device.

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Challenges and State-of-the-Art of Oxides on SiC

MRS Proceedings ◽

10.1557/proc-640-h3.1 ◽

2000 ◽

Vol 640 ◽

Cited By ~ 1

Author(s):

Lori Lipkin ◽

Mrinal Das ◽

John Palmour

Keyword(s):

Single Crystal ◽

Band Gap ◽

High Voltage ◽

State Of The Art ◽

Wide Band ◽

High Current ◽

Power Devices ◽

Wide Band Gap ◽

Single Crystal Sic ◽

Lower Temperature

ABSTRACTSingle crystal SiC is a wide band-gap semiconductor with material characteristics that make it quite suitable for high voltage and high current applications. However, these devices are currently limited by their passivation. Significant improvements have been made with oxides on SiC. The most notable oxide processes are the re-oxidation anneal, a stacked ONO dielectric, and nitridation using an NO or N2O anneal. Additional improvements in lateral MOSFET mobility have been achieved using a surface channel implant, and lower temperature implant activation anneals. However, the passivation remains a significant limitation for SiC power devices.

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New trends in high voltage MOSFET based on wide band gap materials

2017 International Semiconductor Conference (CAS) ◽

10.1109/smicnd.2017.8101143 ◽

2017 ◽

Cited By ~ 3

Author(s):

P. Godignon ◽

V. Soler ◽

M. Cabello ◽

J. Montserrat ◽

J. Rebollo ◽

...

Keyword(s):

Band Gap ◽

High Voltage ◽

Wide Band ◽

Wide Band Gap

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TEM and cathodoluminescence of precipitates in II-VI semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100104509 ◽

1988 ◽

Vol 46 ◽

pp. 488-489

Author(s):

Joanna L. Batstone

Keyword(s):

Crystal Growth ◽

Band Gap ◽

Local Strain ◽

Wide Band ◽

Optoelectronic Device ◽

Wide Band Gap ◽

Bulk Crystal Growth ◽

Transmission Electron ◽

Device Applications ◽

Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

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