Irradiation Effect of Nitrogen Ion Beam on Carbon Nitride Thin Films

2003 ◽  
Vol 792 ◽  
Author(s):  
Shinichiro Aizawa ◽  
Yuka Nasu ◽  
Masami Aono ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Irradiation Effect ◽  
Carbon Filament ◽  
Cross Sectional ◽  
Nitrogen Ions ◽  
Nitrogen Ion

ABSTRACTIrradiation effect of low-energy nitrogen ion beam on amorphous carbon nitride (a-CNx) thin films has been investigated. The a-CNx films were prepared on silicon single crystal substrates by hot carbon-filament chemical vapor deposition (HFCVD). After deposition, the CNx films were irradiated by a nitrogen ion beam with energy from 0.1 to 2.0 keV. Irradiation effect on the film microstructure and composition was studied by SEM and XPS, focusing on the effect of nitrogen ion beam energy. Surface and cross sectional observations by SEM reveal that the as-deposited films show a densely distributed columnar structure and the films change to be a sparsely distributed cone-like structure after irradiation. It is also found that 2.0 keV ions skeltonize the films more clearly than 0.1 kev ions. Depth profiles of nitrogen in the films observed by XPS show that nitrogen absorption into films is more prominent after irradiation by 0.1 keV nitrogen ions than 2.0 keV ions.

Effects of Irradiation by Low Energy Nitrogen Ions on Carbon Nitride Thin Films

2002 ◽  
Vol 750 ◽  
Author(s):  
Yuka Nasu ◽  
Masami Aono ◽  
Shinichiro Aizawa ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe
Keyword(s):  
Thin Films ◽  
Nitrogen Content ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Chemical Vapor ◽  
Low Energy ◽  
Carbon Filament ◽  
X Ray ◽  
Nitrogen Ions

ABSTRACTCarbon nitride (CNx) thin films have been prepared by hot carbon filament chemical vapor deposition, and the nitrogen content in the films is approximately 0.05. The CNx films have been irradiated by 0.1 keV nitrogen ions to increase the nitrogen content after deposition. The nitrogen content in the CNx films was obtained with X-ray photoelectron spectroscopy. Scanning electron microscopy was employed to study microstructures of the films. The experimental results show that nitrogen ions are chemically combined with the CNx films and as a result the nitrogen content increases up to approximately 0.30. Furthermore, it is found that nitrogen ions change the film microstructures and sputter the surfaces of CNx films.

Effect of Microstructure on Microhardness of AlN Thin Films

2001 ◽  
Vol 695 ◽  
Author(s):  
Shuichi Miyabe ◽  
Masami Aono ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Beam Energy ◽  
Ion Beam ◽  
Columnar Structure ◽  
Granular Structure ◽  
Nano Indentation ◽  
Ion Beam Assisted Deposition ◽  
Film Microstructure ◽  
Nitrogen Ion

ABSTRACTAluminum nitride (AlN) thin films with columnar and granular structures were prepared by ion-beam assisted deposition method by changing nitrogen ion beam energy, and the effects of the film microstructure and film thickness on their microhardness were studied by using a nano-indentation system with the maximum force of 3 mN. For the columnar structure film of 600 nm in thickness, the microhardness is found to be approximately 24 GPa when the normalized penetration depth to the film thickness is about 0.1. For the granular structure film of 700 nm in thickness, the microhardness is found to be approximately 14 GPa. These results reveal that the microhardness of the AlN films strongly depends on the film microstructure, which can be controlled by regulating the nitrogen ion beam energy.

Investigation of Titanium Nitride Synthesized by Ion Beam Enhanced Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
Zhou Jiankun ◽  
Liu Xianghuai ◽  
Chen Youshan ◽  
Zheng Zhihong ◽  
Huang Wei ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Ion Beam ◽  
High Hardness ◽  
Columnar Structure ◽  
X Ray Diffraction ◽  
Low Friction ◽  
Oxygen Contamination ◽  
Nitrogen Ions ◽  
Nitrogen Ion ◽  
Deposited Film

ABSTRACTTitanium nitride films have been synthesized at room temperature by alternate deposition of titanium and bombardment by nitrogen ions with an energy of 40KeV. The component depth profiles and the structure of titanium nitride films were investigated by means of RBS, AES, TEM, XPS and X-ray diffraction. The results showed that titanium nitride films formed by ion beam enhanced deposition (IBED) had columnar structure and were mainly composed of TiN crystallites with random orientation. The oxygen contamination in titanium nitride films prepared by IBED was less than that of the deposited film without nitrogen ion bombardment. It was confirmed that a significant intermixed layer exists at the interface. The thickness of this layer was about 40 nm for the film prepared on iron plate. The mechanical properties of the film have been investigated. The films formed by IBED exhibited high hardness, improved wear resistance and low friction.

Preparation of molybdenum nitride thin films by N+ ion implantation

1992 ◽  
Vol 7 (2) ◽  
pp. 374-378 ◽  
Author(s):  
J-G. Choi ◽  
D. Choi ◽  
L.T. Thompson
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Substrate Surface ◽  
Molybdenum Nitride ◽  
X Ray Diffraction ◽  
Ion Energy ◽  
Ion Channeling ◽  
Ion Energies ◽  
Nitrogen Ions ◽  
Nitrogen Ion

A series of molybdenum nitride films were synthesized by implanting energetic nitrogen ions into molybdenum thin films. The resulting films were characterized using x-ray diffraction to determine the effects of nitrogen ion dose (4 × 1016−4 × 1017 N+/cm2), accelerating voltage (50–200 kV), and target temperature (∼298–773 K) on their structural properties. The order of structural transformation with increased incorporation of nitrogen ions into the Mo film can be summarized as follows: Mo → γ−Mo2N → δ−MoN. Nitrogen incorporation was increased by either increasing the dose or decreasing the ion energy. At elevated target temperatures the metastable B1–MoN phase was also produced. In most cases the Mo nitride crystallites formed with the planes of highest atomic density parallel to the substrate surface. At high ion energies preferential orientation developed so that the more open crystallographic directions aligned with the ion beam direction. We tentatively attributed this behavior to ion channeling effects.

Influence of ion-beam energy and substrate temperature on the synthesis of carbon nitride thin films by nitrogen-ion-assisted pulsed laser deposition

1999 ◽  
Vol 86 (9) ◽  
pp. 4954-4958 ◽  
Author(s):  
Y. F. Lu ◽  
Z. M. Ren ◽  
T. C. Chong ◽  
B. A. Cheong ◽  
S. I. Pang ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Beam Energy ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nitrogen Ion

Mechanical Properties of AlN Thin Films Prepared by Ion Beam Assisted Deposition

2000 ◽  
Vol 647 ◽  
Author(s):  
Shuichi Miyabe ◽  
Toshiyuki Okawa ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Beam Energy ◽  
Ion Beam ◽  
High Energy ◽  
Columnar Structure ◽  
Ion Beam Assisted Deposition ◽  
Film Hardness ◽  
Nitrogen Ion

AbstractAluminum nitride (AlN) thin films were prepared by ion-beam assisted deposition method, and the influence of the nitrogen ion beam energy on their microstructure and mechanical properties was studied by changing the ion beam energy from 0.1 to 1.5 keV. Films prepared with a low-energy ion beam show a columnar structure, while films prepared with a high-energy ion beam show a granular structure. The film hardness is found to decrease with increasing nitrogen ion beam energy. It is also found that the film hardness does not change drastically after annealing in nitrogen atmosphere at 500 °C, yielding the residual stress relaxation. It is proposed that the film hardness is dependent on the film microstructure, which can be controlled with the nitrogen ion beam energy, rather than the residual stress in the films.

Nitrogen Ion Beam Irradiation on Amorphous Carbon

2007 ◽  
Vol 539-543 ◽  
pp. 3297-3302
Author(s):  
Yoshihisa Watanabe ◽  
Masami Aono ◽  
Nobuaki Kitazawa
Keyword(s):  
Thin Films ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Ion Irradiation ◽  
Ion Beam ◽  
High Energy ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Depth Profiles ◽  
Nitrogen Ion

Both bulk and thin film amorphous carbon were irradiated using a nitrogen ion beam and changes in surface roughness and composition after ion beam irradiation have been studied. Amorphous carbon thin films were prepared from toluene vapor using plasma enhanced chemical vapor deposition. Ion irradiation was performed at room temperature using a nitrogen ion beam and the ion beam energy was varied from 0.2 to 1.5 keV under the constant ion current density. Surface morphology was observed with atomic force microscopy (AFM). Depth profiles of nitrogen in the irradiated specimens were analyzed by X-ray photoelectron spectroscopy (XPS). AFM observations reveal that after the ion beam irradiation the surface of the bulk amorphous carbon becomes rough, while the surface of the amorphous carbon films becomes smooth. However, the notable difference in the surface roughness is hardly observed between low- and high-energy ion irradiation. From XPS studies, it is found that the nitrogen concentration near the surface increases after the ion irradiation for both bulk and thin films and irradiated nitrogen ions are combined with carbon, resulting in formation of carbon nitride layers. Depth profiles of nitrogen show that for the bulk specimen low-energy ion irradiation is more effective for the carbon nitride formation than high-energy ion irradiation, while for the thin films high-energy ions are implanted more deeply than low-energy ions.

Crystal Structure of Non-Doped and Sn-Doped α-(GaFe)2O3 Thin Films.

2013 ◽  
Vol 1494 ◽  
pp. 147-152 ◽  
Author(s):  
Kentaro Kaneko ◽  
Kazuaki Akaiwa ◽  
Shizuo Fujita
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Chemical Vapor Deposition Method ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Sn Doping ◽  
Sapphire Substrates ◽  
Wide Range

ABSTRACTCorundum structured α-(GaFe)2O3 alloy thin films were obtained on c-plane sapphire substrates by the mist chemical vapor deposition method. Wide range of X-ray diffraction 2θ/θ scanning measurements indicated that these crystals were epitaxially grown on c-plane sapphire substrates and these are no other crystal oriented phase. The cross-sectional and plane-view transmission electron microscope images showed the growth along the c-axis of α-(GaFe)2O3 thin films on sapphire substrates, forming joint of columnar structure. The non-doped α-(GaFe)2O3 thin films showed ferromagnetic properties at 300 K, though the origin of ferromagnetism still remained unresolved. In order to enhance the spin-carrier interaction, Sn doped α-(GaFe)2O3 alloy thin films were fabricated on c-plane sapphire substrates. X-ray diffraction 2θ/θ and ω scanning measurement results indicated that the highly-crystalline films were epitaxially grown on substrates in spite of the Sn-doping.

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