The Impact of the Rare-earth Precursor on the Composition, Structure and Luminescence of Er-doped Silicon-rich Silicon Oxide Films

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

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Light Emission from Intrinsic and Doped Silicon-Rich Silicon Oxide: from the Visible to 1.6 ΜM

MRS Proceedings ◽

10.1557/proc-452-523 ◽

1996 ◽

Vol 452 ◽

Cited By ~ 2

Author(s):

L. Tsybeskov ◽

K. L. Moore ◽

P. M. Fauchet ◽

D. G. Hall

Keyword(s):

Rare Earth ◽

External Quantum Efficiency ◽

Room Temperature ◽

Structural Modification ◽

Silicon Oxide ◽

Light Emission ◽

Crystalline Silicon ◽

Light Emitting ◽

Infra Red ◽

Doped Silicon

AbstractSilicon-rich silicon oxide (SRSO) films were prepared by thermal oxidation (700°C-950°C) of electrochemically etched crystalline silicon (c-Si). The annealing-oxidation conditions are responsible for the chemical and structural modification of SRSO as well as for the intrinsic light-emission in the visible and near infra-red spectral regions (2.0–1.8 eV, 1.6 eV and 1.1 eV). The extrinsic photoluminescence (PL) is produced by doping (via electroplating or ion implantation) with rare-earth (R-E) ions (Nd at 1.06 μm, Er at 1.5 μm) and chalcogens (S at ∼1.6 μm). The impurities can be localized within the Si grains (S), in the SiO matrix (Nd, Er) or at the Si-SiO interface (Er). The Er-related PL in SRSO was studied in detail: the maximum PL external quantum efficiency (EQE) of 0.01–0.1% was found in samples annealed at 900°C in diluted oxygen (∼ 10% in N2). The integrated PL temperature dependence is weak from 12K to 300K. Light emitting diodes (LEDs) with an active layer made of an intrinsic and doped SRSO are manufactured and studied: room temperature electroluminescence (EL) from the visible to 1.6 μmhas been demonstrated.

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Luminescence of Er-doped silicon oxide–zirconia thin films

Journal of Luminescence ◽

10.1016/j.jlumin.2009.02.003 ◽

2009 ◽

Vol 129 (7) ◽

pp. 696-703 ◽

Cited By ~ 3

Author(s):

Carlos Rozo ◽

Luis F. Fonseca ◽

Daniel Jaque ◽

José García Solé

Keyword(s):

Thin Films ◽

Silicon Oxide ◽

Doped Silicon ◽

Er Doped

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Rare-earth element doping in glass frit for improved performance in silicon solar cells

Functional Materials Letters ◽

10.1142/s1793604719500802 ◽

2019 ◽

Vol 12 (06) ◽

pp. 1950080

Author(s):

Zhou Gao ◽

Xing Jiang ◽

Xingbo Wang ◽

Yongji Chen ◽

Jian Liu ◽

...

Keyword(s):

Solar Cells ◽

Rare Earth ◽

Glass Frit ◽

Silicon Solar Cells ◽

Element Doping ◽

Improved Performance ◽

Er Doped ◽

Doped Glass ◽

Conversion Efficiencies ◽

The Rare Earth

Glass frit plays an important role in the silver paste for silicon solar cells. In this work, we prepare glass frit doped with different rare-earth elements (Y, La, Sm, Er) and study how the doping element affects the performance of the solar cells. Solar cells with La-doped and Sm-doped glass frits show average conversion efficiencies higher than 17.5%, while solar cells with Y-doped or Er-doped frit show lower efficiencies. By analyzing the Raman spectra of the rare-earth doped glass frits, we find that the average coordination number of Te–O ([Formula: see text]) in the glass can be tuned by the rare-earth dopant. La or Sm doping leads to a moderate value of [Formula: see text], which is believed to achieve a glass formation ability that optimizes the structure of the Ag–Si interface of the cell for the best performance.

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Behavior of Various Organosilicon Molecules in PECVD Processes for Hydrocarbon-Doped Silicon Oxide Films

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.347 ◽

2007 ◽

Vol 124-126 ◽

pp. 347-350 ◽

Cited By ~ 4

Author(s):

Yong Sup Yun ◽

Takanori Yoshida ◽

Norifumi Shimazu ◽

Yasushi Inoue ◽

Nagahiro Saito ◽

...

Keyword(s):

Chemical Bonding ◽

Emission Spectroscopy ◽

Optical Emission Spectroscopy ◽

Silicon Oxide ◽

Oxide Films ◽

Chemical Vapor ◽

Optical Emission ◽

Deposition Process ◽

Doped Silicon ◽

Oxygen Atoms

Plasma diagnosis was performed by means of optical emission spectroscopy in the plasma-enhanced chemical vapor deposition process for preparation of hydrocarbon-doped silicon oxide films. The chemical bonding states were characterized by a fourier-transform infrared spectrometer. Based on the results of the diagnosis in organosilane plasma and the chemical bonding states, a reaction model for the formation process of hydrocarbon-doped silicon oxide films was discussed. From the results of optical emission spectroscopy, we found that the oxygen atoms of methoxy groups in TMMOS molecules can be dissociated easily in the plasma and behave as a kind of oxidizing agent. Siloxane bondings in HMDSO, on the other hand, hardly expel oxygen atoms.

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