X-ray diffraction and Raman scattering study of SrBi2Ta2O9 ceramics and thin films with Bi3TiNbO9 addition

2001 ◽  
Vol 79 (23) ◽  
pp. 3827-3829 ◽  
Author(s):  
J. S. Zhu ◽  
H. X. Qin ◽  
Z. H. Bao ◽  
Y. N. Wang ◽  
W. Y. Cai ◽  
...  
2011 ◽  
Vol 213 ◽  
pp. 157-160
Author(s):  
Juan Hou ◽  
Hai Bin Cao ◽  
Xu Chu Huang ◽  
Chun Yan Song

Dysprosium (Dy) ion implanted CdTe polycrystalline thin film (PTF) deposited on the ceramic substrate by the close spaced sublimation (CSS) method. Both the energy dispersive X-ray spectrometer(EDS)and Raman scattering analysis show that the as-deposited and Dy ion implanted CdTe PTF are non-stoichiometric with excess telluride. Furthermore, X-ray diffraction study reveals that the CdTe PTF forms a zinc-blended structure. In the Raman scattering analysis, the position of the peak on implantation does not change apparently whereas the intensity of the peak decreases owing to the lattice damage and increases as a result of thermal annealing. The data support that Raman activity is enhanced after Dy ion implantation.


1992 ◽  
Vol 242 ◽  
Author(s):  
W. J. Meng ◽  
T. A. Perry ◽  
J. Heremans ◽  
Y. T. Cheng

ABSTRACTThin films of aluminum nitride were grown epitaxially on Si(111) by ultra-high-vacuum dc magnetron reactive sputter deposition. Epitaxy was achieved at substrate temperatures of 600° C or above. We report results of film characterization by x-ray diffraction, transmission electron microscopy, and Raman scattering.


2005 ◽  
Vol 178 (9) ◽  
pp. 2846-2857 ◽  
Author(s):  
Sanjay Kumar Mishra ◽  
Rajeev Ranjan ◽  
Dhananjai Pandey ◽  
Pierre Ranson ◽  
Robert Ouillon ◽  
...  

2017 ◽  
Vol 121 ◽  
pp. 1-10 ◽  
Author(s):  
Romain Parize ◽  
Thomas Cossuet ◽  
Odette Chaix-Pluchery ◽  
Hervé Roussel ◽  
Estelle Appert ◽  
...  

2001 ◽  
Vol 304 (1-4) ◽  
pp. 175-180 ◽  
Author(s):  
K. Senthil ◽  
D. Mangalaraj ◽  
Sa.K. Narayandass ◽  
R. Kesavamoorthy ◽  
G.L.N. Reddy ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (58) ◽  
pp. 52575-52582 ◽  
Author(s):  
H. F. Liu ◽  
Y. J. Jin ◽  
C. G. Li ◽  
S. B. Dolmanan ◽  
S. Guo ◽  
...  

Ga-doped Ge thin films grown on GaAs (001) substrates have been studied and compared with unintentionally doped Ge film by using HRXRD and Raman scattering in both surface and cross-section configurations.


2005 ◽  
pp. 3539-3542
Author(s):  
Yu Zhou ◽  
Hua Ke ◽  
De Chang Jia ◽  
W. Wang ◽  
J.C. Rao

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