X-ray diffraction and Raman scattering study of thermal-induced phase transformation in vertically aligned TiO2 nanocrystals grown on sapphire(100) via metal organic vapor deposition

2008 ◽  
Vol 310 (15) ◽  
pp. 3663-3667 ◽  
Author(s):  
C.A. Chen ◽  
K.Y. Chen ◽  
Y.S. Huang ◽  
D.S. Tsai ◽  
K.K. Tiong ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Raman Scattering ◽  
Vapor Deposition ◽  
X Ray Diffraction ◽  
Tio2 Nanocrystals ◽  
X Ray ◽  
Organic Vapor ◽  
Metal Organic ◽  
Vertically Aligned ◽  
Scattering Study

Integration of GaAs on Ge/Si towers by MOVPE

2013 ◽  
Vol 1538 ◽  
pp. 283-289
Author(s):  
A. G. Taboada ◽  
T. Kreiliger ◽  
C. V. Falub ◽  
M. Richter ◽  
F. Isa ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Morphological Evolution ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Low Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Organic Vapor ◽  
Metal Organic

ABSTRACTWe report on the maskless integration of micron-sized GaAs crystals on patterned Si substrates by metal organic vapor phase epitaxy. In order to adapt the mismatch between the lattice parameter and thermal expansion coefficient of GaAs and Si, 2 μm tall Ge crystals were first grown as virtual substrate by low energy plasma enhanced chemical vapor deposition. We investigate the morphological evolution of the GaAs structures grown on top of the Ge crystals at the transition towards full pyramids with energetically stable {111} facets. A substantial release of strain is shown in GaAs crystals with a height of 2 μm and lateral sizes up to 15×15 μm2 by both X-ray diffraction and photoluminescence.

scholarly journals Легированный кремнием GaSb, выращенный методом ГФЭМОС в широком диапазоне соотношений V/III

2021 ◽  
Vol 55 (10) ◽  
pp. 931
Author(s):  
Р.В. Левин ◽  
А.С. Власов ◽  
Б.В. Пушный
Keyword(s):  
Raman Scattering ◽  
Carrier Concentration ◽  
Vapor Phase ◽  
Free Carrier ◽  
Free Carrier Concentration ◽  
X Ray Diffraction ◽  
X Ray ◽  
Organic Vapor ◽  
Metal Organic ◽  
Si Doped

Charachterization of Si-doped GaSb epitaxial layers grown by metal organic vapor phase epitaxy is presented. Samples are grown at constant SiH4 flow with a TMSb/TEGa ratio ranged from 1 to 50. X-ray diffraction, Raman scattering, photoluminescence, resistivity, free carrier concentration and their mobility are studied.

scholarly journals Well-AlignedIrO2Nanocrystals

2007 ◽  
Vol 2007 ◽  
pp. 1-17 ◽  
Author(s):  
Alexandru Korotcov ◽  
Reui-San Chen ◽  
Hung-Pin Hsu ◽  
Ying-Sheng Huang ◽  
Dah-Shyang Tsai ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Substrate Effect ◽  
X Ray Diffraction ◽  
Scanning Electron Microscopy Micrographs ◽  
X Ray ◽  
Metal Organic ◽  
Vertically Aligned ◽  
Organic Chemical Vapor Deposition

We review the results of synthesis of well-alignedIrO2nanocrystals (NCs) on sapphire (SA), LiNbO3(LNO), LiTaO3(LTO) substrates via reactive magnetron sputtering and metal-organic chemical vapor deposition. The surface morphology and structural properties of the as-deposited NCs were characterized. Field emission scanning electron microscopy micrographs reveal that NCs grown on SA(100)/LNO(100) are vertically aligned, while the NCs on SA(012)/LTO(012) and SA(110) contain singly and doubly tilted alignments, respectively, with a tilt angle of∼35∘from the normal to the substrates. NCs grown on SA(001) show in-plane alignment with mosaic structure. The X-ray diffraction results indicate that the NCs are (001), (101), and (100) oriented on SA(100)/LNO(100), SA(012)/LTO(012)/SA(110), and SA(001) substrates, respectively. A strong substrate effect on the alignment of theIrO2NCs deposition has been demonstrated. The roles of different substrates in the formation of various textures of nanocrystallineIrO2are studied and the possible mechanisms have been discussed.

Non-uniform distribution of dopant iron ions in TiO2 nanocrystals probed by X-ray diffraction, Raman scattering, photoluminescence and photocatalysis

2015 ◽  
Vol 3 (8) ◽  
pp. 1846-1853 ◽  
Author(s):  
S. Manu ◽  
M. Abdul Khadar
Keyword(s):  
Raman Scattering ◽  
Uniform Distribution ◽  
Semiconductor Nanocrystals ◽  
Iron Ions ◽  
X Ray Diffraction ◽  
Tio2 Nanocrystals ◽  
X Ray ◽  
Practical Applications ◽  
Mechanism Operative

The phenomenon of ‘self-purification’ is a real mechanism operative in nanocrystals and this should be taken into account while doping semiconductor nanocrystals with external impurities for practical applications.

A combined X-ray diffraction and Raman scattering study of the phase transitions in Sr1−xCaxTiO3 (x=0.04, 0.06, and 0.12)

2005 ◽  
Vol 178 (9) ◽  
pp. 2846-2857 ◽  
Author(s):  
Sanjay Kumar Mishra ◽  
Rajeev Ranjan ◽  
Dhananjai Pandey ◽  
Pierre Ranson ◽  
Robert Ouillon ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Raman Scattering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scattering Study

Displacive Phase Transformation in Vanadium - Substituted Lanthanum Niobate

1983 ◽  
Vol 24 ◽  
Author(s):  
A. T. Aldred ◽  
S.-K. Chan ◽  
M. H. Grimsditch ◽  
M. V. Nevitt
Keyword(s):  
Phase Transformation ◽  
High Temperature ◽  
Low Temperature ◽  
Raman Scattering ◽  
Transformation Temperature ◽  
Complex Oxides ◽  
Temperature Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
First Order

ABSTRACTThe displacive transformations in complex oxides of the type LaNb1-xVxO4 has been studied by x-ray diffraction and Raman scattering for 0 < x < 0.3. X-ray diffraction results indicate that the transformation from the tetragonal high temperature structure (C4h6) to the monoclinic low-temperature structure (C2h6) is higher than first order and that the transformation temperature Tc is depressed significantly by V substitution. Raman scattering results show that the force constant between the nearest (Nb, V)O4 tetrahedral units behave uniquely compared to others. It softens at Tc as a function of composition and it also softens as a function of temperature as Tc is approached from above.

Synthesis and characterization of well-aligned anatase TiO2 nanocrystals on fused silica via metal–organic vapor deposition

CrystEngComm ◽  
2009 ◽  
Vol 11 (11) ◽  
pp. 2313 ◽  
Author(s):  
Chi-An Chen ◽  
Yi-Min Chen ◽  
Ying-Sheng Huang ◽  
Dah-Shyang Tsai ◽  
Kwong-Kau Tiong ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Fused Silica ◽  
Anatase Tio2 ◽  
Synthesis And Characterization ◽  
Tio2 Nanocrystals ◽  
Organic Vapor ◽  
Metal Organic

X-ray diffraction and Raman scattering study of SrBi2Ta2O9 ceramics and thin films with Bi3TiNbO9 addition

2001 ◽  
Vol 79 (23) ◽  
pp. 3827-3829 ◽  
Author(s):  
J. S. Zhu ◽  
H. X. Qin ◽  
Z. H. Bao ◽  
Y. N. Wang ◽  
W. Y. Cai ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scattering Study

INSULATING 211 PHASE-SUPERCONDUCTING 123 PHASE TRANSFORMATION IN THE YBaCuO SYSTEM

1991 ◽  
Vol 05 (17) ◽  
pp. 1139-1145
Author(s):  
C. Y. HUANG ◽  
B. H. LOO ◽  
M. K. WU
Keyword(s):  
Phase Transformation ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Raman Scattering ◽  
Electrical Resistance ◽  
Magnetic Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrical Resistance Measurements ◽  
Scanning Electron

We have studied the conversion of insulating Y 2 BaCuO 5 to superconducting YBa 2 Cu 3 O x by means of Raman scattering, magnetization and electrical resistance measurements, scanning electron microscope and X-ray diffraction methods. The magnetic data show that as high as 12% of the conversion can be achieved.

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