In situ analysis of the crystallization process of Sb 2 S 3 thin films by Raman scattering and X-ray diffraction

2017 ◽  
Vol 121 ◽  
pp. 1-10 ◽  
Author(s):  
Romain Parize ◽  
Thomas Cossuet ◽  
Odette Chaix-Pluchery ◽  
Hervé Roussel ◽  
Estelle Appert ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Crystallization Process ◽  
In Situ Analysis ◽  
X Ray Diffraction ◽  
X Ray

In situ X-ray diffraction study of crystallization process of GeSbTe thin films during heat treatment

2005 ◽  
Vol 244 (1-4) ◽  
pp. 281-284 ◽  
Author(s):  
Naohiko Kato ◽  
Ichiro Konomi ◽  
Yoshiki Seno ◽  
Tomoyoshi Motohiro
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Diffraction Study ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
X Ray

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Electric-field-induced lattice distortion in epitaxial BiFeO3 thin films as determined by in situ time-resolved x-ray diffraction

2017 ◽  
Vol 111 (8) ◽  
pp. 082907 ◽  
Author(s):  
Seiji Nakashima ◽  
Osami Sakata ◽  
Hiroshi Funakubo ◽  
Takao Shimizu ◽  
Daichi Ichinose ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Lattice Distortion ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray ◽  
Bifeo3 Thin Films

Thermal stability and miscibility of co-evaporated methyl ammonium lead halide (MAPbX3, X = I, Br, Cl) thin films analysed by in situ X-ray diffraction

2018 ◽  
Vol 6 (24) ◽  
pp. 11496-11506 ◽  
Author(s):  
Paul Pistor ◽  
Thomas Burwig ◽  
Carlo Brzuska ◽  
Björn Weber ◽  
Wolfgang Fränzel
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Thermal Treatment ◽  
Phase Evolution ◽  
X Ray Diffraction ◽  
Crystalline Phases ◽  
X Ray ◽  
Subsequent Thermal Treatment ◽  
Lead Halide

We present the identification of crystalline phases by in situ X-ray diffraction during growth and monitor the phase evolution during subsequent thermal treatment of CH3NH3PbX3 (X = I, Br, Cl) perovskite thin films.

Ethanol Hydrates and Solid Solution Formed by Gas Condensation: An in Situ Study by Micro-Raman Scattering and X-ray Diffraction

2010 ◽  
Vol 114 (39) ◽  
pp. 10646-10654 ◽  
Author(s):  
Sébastien Facq ◽  
Florence Danède ◽  
Bertrand Chazallon
Keyword(s):  
Solid Solution ◽  
Raman Scattering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gas Condensation ◽  
In Situ Study

In situ X-ray diffraction study of the controlled oxidation and reduction in the V–O system for the synthesis of VO2 and V2O3 thin films

2015 ◽  
Vol 3 (43) ◽  
pp. 11357-11365 ◽  
Author(s):  
Geert Rampelberg ◽  
Bob De Schutter ◽  
Wouter Devulder ◽  
Koen Martens ◽  
Iuliana Radu ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffraction Study ◽  
Resistance Switching ◽  
X Ray Diffraction ◽  
X Ray

VO2 and V2O3 thin films were prepared during in situ XRD investigation by oxidation and reduction of V and V2O5. Films show up to 5 orders of magnitude resistance switching.

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