Structrual Characterization and Raman Scattering of Epitaxial Aluminum Nitride Thin Films on Si(111)

1992 ◽  
Vol 242 ◽  
Author(s):  
W. J. Meng ◽  
T. A. Perry ◽  
J. Heremans ◽  
Y. T. Cheng
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Raman Scattering ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Reactive Sputter Deposition ◽  
Transmission Electron ◽  
Substrate Temperatures

ABSTRACTThin films of aluminum nitride were grown epitaxially on Si(111) by ultra-high-vacuum dc magnetron reactive sputter deposition. Epitaxy was achieved at substrate temperatures of 600° C or above. We report results of film characterization by x-ray diffraction, transmission electron microscopy, and Raman scattering.

Microstructure and Properties of CoSi2 Thin Films on (100) Silicon by Laser Physical Vapor Deposition

1992 ◽  
Vol 285 ◽  
Author(s):  
P. Tiwari ◽  
R. Chowdhury ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Microstructure And Properties ◽  
Transmission Electron ◽  
Substrate Temperatures ◽  
Deposited Films

ABSTRACTLaser physical vapor deposition (LPVD) has been used to deposit thin CoSi2 films on (001)silicon at different substrate temperatures ranging from room temperature to 600°C. Particulate-free silicide thin films were characterized by X-ray diffraction, Rutherford backscattering, and high resolution transmission electron microscopy. We have found that films deposited at 200°C and below are amorphous; 400°C deposited films are polycrystalline whereas films deposited at 600°C are of epitaxial nature. The Effect of subsequent annealing on resistivity of room-temperature deposited thin films has been investigated. The resistivity value decreases to less than 15 μΩcm after annealing making these films suitable for microelectronics applications. The correlation between microstructure and properties of these films are discussed.

Effects of Microstructure on Photoluminescence of SrS:Eu2+,SM3+ thin Films

1993 ◽  
Vol 301 ◽  
Author(s):  
Susan Z. Hua ◽  
L. Salamanca-Riba ◽  
M. Wuttig ◽  
P. K. Soltani
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Growth Rates ◽  
Growth Conditions ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Substrate Temperatures ◽  
The Eu

ABSTRACTThe microstructure and its effects on the photoluminescence properties of SrS:Eu2+,Sm3+ thin films grown with different conditions were studied by transmission electron microscopy, x-ray diffraction and photoluminescence techniques. The SrS:Eu2+,Sm3+ thin films were prepared by e-beam evaporation at different substrate temperatures and growth rates. Both of these growth conditions affect the crystallinity of the thin films. The Sm3+ emission is stronger in the films grown at higher growth rates and at an optimum substrate temperature. We believe that the stronger Sm3+ emission is due to the higher population of Sm trivalent charge states in the films. Further increase of the substrate temperature increases the grain size in the films, but has no significant effect on the PL emission properties. In contrast, the Eu2+ emission is less sensitive to growth conditions.

MOCVD Growth of Epitaxial SrTiO3 Thin Films on YBa2 Cu3O7−x/LaAlO3

1993 ◽  
Vol 335 ◽  
Author(s):  
S. Liang ◽  
C. Chern ◽  
Z. Q. Shi ◽  
Y. Lu ◽  
P. Lu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Ac Susceptibility ◽  
Superconducting Property ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mocvd Growth ◽  
Transmission Electron ◽  
Substrate Temperatures

AbstractStrontium titanate (SrTiO3) thin films have been epitaxially grown on YB2Cu3O7−x (YBCO)/LaAlO3 at substrate temperatures of 660 to 700°C. X-ray diffraction (XRD) results indicated that single crystalline SrTiO3 thin films were epitaxially grown on the substrate with <100> orientation perpendicular to the substrates. The compositions of the films with different growth conditions were examined by Rutherford backscattering spectroscopy (RBS) and energy dispersive x-ray spectroscopy (EDX). The ratio of Sr/Ti is in the range of 0.9 to 1.1 for the films with a thickness of 1000–2000Å. The surface morphology of the films and the interfaces of the SrTiO3/YBCO structure were examined by scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). Very smooth surface and sharp interface were observed. The superconducting property of the YBCO layer, as measured by ac susceptibility, did not degrade after growth of SrTiO3 film. The dielectric constant as high as 320 was obtained at 100KHz. The leakage current density is less than 1×10−6A/cm2 at 3V operation.

Growth of Stoichiometric bn Films by Pulsed Laser Evaporation

1988 ◽  
Vol 128 ◽  
Author(s):  
P. T. Murray ◽  
M. S. Donley ◽  
N. T. McDevitt
Keyword(s):  
Thin Films ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Grazing Incidence ◽  
Thermodynamic Calculations ◽  
Laser Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Substrate Temperatures

ABSTRACTThe feasibility of growing stoichiometric thin films of BN by pulsed laser evaporation has been investigated. Films grown under high vacuum conditions were N-deficient. This result is consistent with thermodynamic calculations, which indicate that B metal formation, with concomitant N2 desorption, is energetically favored over BN formation. Stoichiometric films were grown in NH3 with substrate temperatures of 400, 500, and 1000°C. Analysis of films grown under these conditions by grazing incidence x-ray diffraction indicates the films to be highly oriented, hexagonal BN.

Growth of Stoichiometric Bn Films by Pulsed Laser Evaporation

1988 ◽  
Vol 140 ◽  
Author(s):  
P. T. Murray ◽  
M. S. Donley ◽  
N. T. McDevitt
Keyword(s):  
Thin Films ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Grazing Incidence ◽  
Thermodynamic Calculations ◽  
Laser Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Substrate Temperatures

AbstractThe feasibility of growing stoichiometric thin films of BN by pulsed laser evaporation has been investigated. Films grown under high vacuum conditions were N-deficient. This result is consistent with thermodynamic calculations, which indicate that B metal formation, with concomitant N2 desorption, is energetically favored over BN formation. Stoichiometric films were grown in NH3 with substrate temperatures of 400, 500, and 1000ºC. Analysis of films grown under these conditions by grazing incidence x-ray diffraction indicates the films to be highly oriented, hexagonal BN.

Micro-Raman Scattering Properties of Highly Oriented AlN Films

1998 ◽  
Vol 12 (19) ◽  
pp. 1963-1974 ◽  
Author(s):  
Ming S. Liu ◽  
K. W. Nugent ◽  
S. Prawer ◽  
L. A. Bursill ◽  
J. L. Peng ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Raman Scattering ◽  
Film Plane ◽  
Phonon Confinement ◽  
X Ray Diffraction ◽  
Phonon Modes ◽  
X Ray ◽  
Transmission Electron ◽  
Scattering Geometry ◽  
Confinement Model

Micro-Raman scattering by highly oriented crystalline aluminum nitride has been measured. Phonon modes in AlN were identified in different scattering geometry configurations and scattering polarizations. The phonon modes revealed that aluminum nitride films are highly oriented with the wurtzite c-axis direction normal to the film plane. The Raman scattering modes are broadened and shifted due to grain boundaries and other defects in the films. The defect scattering was analysed using the phonon confinement model. These results were compared with results obtained from X-ray diffraction powder patterns and high-resolution transmission electron microscopy.

Growth Mode of CeO2 on Si Surface

1993 ◽  
Vol 318 ◽  
Author(s):  
Toyohiro Chikyow ◽  
Lee Tye ◽  
Nadia A. El-Masry ◽  
Salah M. Bedair
Keyword(s):  
High Vacuum ◽  
Interface Structure ◽  
Ultra High Vacuum ◽  
Voltage Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing ◽  
Transmission Electron ◽  
Capacitance Voltage ◽  
Deposited Film

ABSTRACTThe interface structure and electrical properties of CeO2/Si (111) grown by laser ablation in ultra high vacuum was investigated by high resolution transmission electron microscopy .Auger electron spectroscopy and capacitance-voltage measurement. The deposited film was single crystalline CeO2 as indicated by RHEED and x-ray diffraction observations. However, during the deposition, a reaction between CeO2 and Si occurred at the interface. This reaction resulted in the formation of an oxygen deficient amorphous CeOX layer and a S1O2 layer. Post annealing in oxygen atmosphere caused the disappearance of the amorphous CeOX and the regrowth of crystalline CeO2. The SiO2 thickness was also increased by annealing. The modified structure of CeO2/SiO2/Si showed a higher break down valtage, compared with the as-deposited sample. From these results, a combination of CeO2 and SiO2 can have a great potential for SOI structure.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Optical properties of anatase TiO2 films modified by N ion implantation

2012 ◽  
Vol 90 (1) ◽  
pp. 39-43 ◽  
Author(s):  
X. Xiang ◽  
D. Chang ◽  
Y. Jiang ◽  
C.M. Liu ◽  
X.T. Zu
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atomic Force ◽  
Light Region ◽  
Uv Visible ◽  
Substrate Temperatures

Anatase TiO2 thin films are deposited on K9 glass samples at different substrate temperatures by radio frequency magnetron sputtering. N ion implantation is performed in the as-deposited TiO2 thin films at ion fluences of 5 × 1016, 1 × 1017, and 5 × 1017 ions/cm2. X-ray diffraction, atomic force microscope, X-ray photoelectron spectroscopy (XPS), and UV–visible spectrophotometer are used to characterize the films. With increasing N ion fluences, the absorption edges of anatase TiO2 films shift to longer wavelengths and the absorbance increases in the visible light region. XPS results show that the red shift of TiO2 films is due to the formation of N–Ti–O compounds. As a result, photoactivity is enhanced with increasing N ion fluence.

Application of Aluminum Nitride Thin Film for Micromachined Ultrasonic Transducers

2005 ◽  
Vol 892 ◽  
Author(s):  
Qianghua Wang ◽  
Jianzeng Xu ◽  
Changhe Huang ◽  
Gregory W Auner
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Ultrasonic Transducers ◽  
X Ray Diffraction ◽  
Effective Coupling ◽  
Resonant Frequencies ◽  
X Ray ◽  
Coupling Factors ◽  
Sandwiched Structure

AbstractThis paper reports the fabrication and characterization of micromachined ultrasonic transducers (MUT) based on piezoelectric aluminum nitride (AlN) thin films. The MUT device is composed of an Al/AlN/Al sandwiched structure overlaid on top of a silicon (Si) diaphragm. X-ray diffraction (XRD) scan shows that highly c-axis oriented AlN (002) thin films have been grown on Al/Si(100) substrates. Electrical impedance of the MUT devices is analyzed as a function of frequency. The fundamental resonant frequencies of the devices are found in the range of 65-70 kHz, which are in approximation to the theoretical calculation. The effective coupling factors of the devices are also derived as 0.18.

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