Midinfrared IV–VI vertical-cavity surface-emitting lasers with zero-, two-, and three-dimensional systems in the active regions

2002 ◽  
Vol 81 (2) ◽  
pp. 208-210 ◽  
Author(s):  
J. Fürst ◽  
H. Pascher ◽  
T. Schwarzl ◽  
M. Böberl ◽  
W. Heiss ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Active Regions ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

scholarly journals Влияние параметров короткопериодной сверхрешетки InGaAs/InGaAlAs на эффективность фотолюминесценции

2020 ◽  
Vol 46 (22) ◽  
pp. 27
Author(s):  
С.С. Рочас ◽  
И.И. Новиков ◽  
А.Г. Гладышев ◽  
Е.С. Колодезный ◽  
А.В. Бабичев ◽  
...  
Keyword(s):  
Active Regions ◽  
Cavity Surface ◽  
X Ray Diffraction ◽  
Barrier Layer Thickness ◽  
Inp Substrate ◽  
Short Period ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

The results of the study of heterostructures based on short-period InGaAs/InGaAlAs superlattices fabricated by molecular beam epitaxy on an InP substrate with the aim of using them as active regions for vertical-cavity surface emitting lasers of the 1.3 μm spectral range are studied. Photoluminescence and X-ray diffraction studies of the fabricated heterostructures are carried out. It was shown that a change in the ratio of the quantum well thickness and the barrier layer thickness of the superlattice allows one to controllably shift the position of the photoluminescence peak and to provide the heterostructure parameters necessary to achieve lasing at a wavelength of 1.3 μm, while the photoluminescence efficiency remains practically unchanged.

EXTENDED WAVELENGTH (1.0 to 1.3 μm) InGaAs/GaAs QUANTUM DOT GaAs-BASED VERTICAL-CAVITY SURFACE-EMITTING AND LATERAL-CAVITY EDGE-EMITTING LASERS

1998 ◽  
Vol 09 (04) ◽  
pp. 979-1005
Author(s):  
D. G. DEPPE ◽  
D. L. HUFFAKER
Keyword(s):  
Quantum Dot ◽  
Quantum Wells ◽  
Three Dimensional ◽  
Active Regions ◽  
Cavity Surface ◽  
Novel Device ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Gaas Quantum Dot ◽  
Vertical Cavity

An important advance in InGaAs/GaAs quantum dot lasers has been the demonstration of lasing at wavelengths significantly longer than that possible using InGaAs strained quantum wells, extending beyond 1.3 μm. These fully GaAs-based active regions are compatible with commercial vertical-cavity surface-emitting laser (VCSEL) technology based on selective oxidation, and offer novel performance due to their three-dimensional electronic confinement. This chapter reviews the status of long wavelength quantum dot edge-emitting lasers and VCSELs, and presents some of the new physical principles needed to understand their novel device characteristics.

Long-Wavelength Vertical-Cavity Surface-Emitting Laser Diodes

1996 ◽  
Vol 421 ◽  
Author(s):  
D.I. Babic ◽  
V. Jayaraman ◽  
N. M. Margalit ◽  
K. Streubel ◽  
M.E. Heimbuch ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Active Regions ◽  
Cavity Surface ◽  
Long Wavelength ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Lattice Matched

AbstractLong-wavelength (1300/1550 nm) vertical-cavity surface-emitting lasers (VCSELs) have been much more difficult to realize than VCSELs at shorter wavelengths such as 850/980 nm. The primary reason for this has been the low refractive index difference and reflectivity associated with lattice-matched InP/InGaAsP mirrors. A solution to this problem is to “wafer-fuse” high-reflectivity GaAs/AlGaAs mirrors to InP/InGaAsP active regions. This process has led to the first room-temperature continuous-wave (CW) 1.54 μm VCSELs. In this paper, we discuss two device geometries which employ wafer-fused mirrors, both of which lead to CW operation. We also discuss fabrication of WDM arrays using long-wavelength VCSELs.

Self-consistent real three-dimensional simulation of vertical-cavity surface-emitting lasers

2006 ◽  
Vol 23 (9) ◽  
pp. 1761 ◽  
Author(s):  
Péter Nyakas ◽  
Gábor Varga ◽  
Zsolt Puskás ◽  
Naoki Hashizume ◽  
Tamás Kárpáti ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Self Consistent ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Dimensional Simulation ◽  
Vertical Cavity
Sign in / Sign up

Export Citation Format

Share Document