Large remanent polarization of Bi4Ti3O12-based thin films modified by the site engineering technique

2002 ◽  
Vol 92 (3) ◽  
pp. 1518-1521 ◽  
Author(s):  
Takayuki Watanabe ◽  
Takashi Kojima ◽  
Tomohiro Sakai ◽  
Hiroshi Funakubo ◽  
Minoru Osada ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Engineering Technique ◽  
Large Remanent Polarization

Large remanent polarization of 100% polar-axis-oriented epitaxial tetragonal Pb(Zr0.35Ti0.65)O3 thin films

2003 ◽  
Vol 82 (26) ◽  
pp. 4761-4763 ◽  
Author(s):  
Hitoshi Morioka ◽  
Gouji Asano ◽  
Takahiro Oikawa ◽  
Hiroshi Funakubo ◽  
Keisuke Saito
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Polar Axis ◽  
Large Remanent Polarization

Large remanent polarization and small leakage in sol–gel derived Bi(Zn1/2Zr1/2)O3–PbTiO3ferroelectric thin films

2013 ◽  
Vol 42 (2) ◽  
pp. 585-590 ◽  
Author(s):  
Linxing Zhang ◽  
Jun Chen ◽  
Hanqing Zhao ◽  
Longlong Fan ◽  
Yangchun Rong ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Large Remanent Polarization

Well-saturated ferroelectric polarization in PbTiO3–SmFeO3 thin films

2016 ◽  
Vol 3 (11) ◽  
pp. 1473-1479 ◽  
Author(s):  
Yilin Wang ◽  
Hanqing Zhao ◽  
Linxing Zhang ◽  
Zhanning Liu ◽  
Jun Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Ferroelectric Polarization ◽  
Large Remanent Polarization

Large remanent polarization in PbTiO3–SmFeO3 thin films with distinct a-domains.

Effect of Characteristics of SrRuO3 Buffer Layer on the Ferroelectric Properties of (Pb0.97La0.30)(Zr0.66Ti0.34)O3 Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
Yu-Jen Chen ◽  
Gwo Jamn ◽  
Kuo-Shung Liu ◽  
I-Nan Lina
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Low Leakage ◽  
Low Leakage Current ◽  
C 30 ◽  
Plzt Thin Films ◽  
Large Remanent Polarization

AbstractA two-step pulsed laser deposition (PLD) process, including PLD at a substrate temperature lower than 150°C and rapid-thermal-annealing (RTA) at around 550°C (30 s), has been successfully applied for growing (Pb0.97La0.03)(Zr0.66Ti0.034)0.9875O3, PLZT, thin films. Interdiffusion between layers is pronouncedly suppressed due to the presence of the SrRuO3 layer, which markedly improves the electrical properties of PLZT films. The PLZT films thus obtained exhibit large remanent polarization P,=19 µC/cm2 (with coercive force Ec=78 kV/cm), low leakage current density J11≤8 × 1O−6 A/cm2 (up to 400 kV/cm) and fatigue free characteristics.

scholarly journals Ferroelectricity of Lead-Zirconate-Titanate Thin Films Prepared by Laser Ablation

1991 ◽  
Vol 243 ◽  
Author(s):  
Toshio Ogawa ◽  
Hideo Kidoh ◽  
Hideyuki Yashima ◽  
Akiharu Morimoto ◽  
Tatsuo Shimizu
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Lead Zirconate ◽  
Excimer Laser Ablation ◽  
Sapphire Substrates ◽  
Zirconate Titanate ◽  
Effective Voltage ◽  
Large Remanent Polarization

AbstractLead-zirconate-titanate films were prepared by excimer laser ablation. The coercive field of films deposited on MgO substrates with an electrode was lower than that of films deposited on sapphire substrates. Laser fluence influenced the grain and crystalline size, resulting in a change in the Ec. Film thicknesses were varied over a range from 0.3 to 2.41μm, with the thinnest film showing a large remanent polarization even at an applied effective voltage of 5V.

Large remanent polarization in Ta-doped HfO2 thin films by reactive sputtering

2021 ◽  
Vol 119 (4) ◽  
pp. 042902
Author(s):  
Cai-Qin Luo ◽  
Chao-Yang Kang ◽  
Yan-Ling Song ◽  
Wan-Ping Wang ◽  
Wei-Feng Zhang
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Reactive Sputtering ◽  
Large Remanent Polarization
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