Large remanent polarization of cerium-modified bismuth–titanate thin films for ferroelectric random access memories

2003 ◽  
Vol 21 (4) ◽  
pp. 1376-1380 ◽  
Author(s):  
Kyoung-Tae Kim ◽  
Chang-Il Kim ◽  
Dong-Hee Kang ◽  
Il-Wun Shim
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Random Access ◽  
Ferroelectric Random Access Memories ◽  
Large Remanent Polarization

scholarly journals Formation and characteristics of highly c-axis-oriented Bi3.25La0.75Ti3O12 thin films on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates

2001 ◽  
Vol 16 (11) ◽  
pp. 3124-3132 ◽  
Author(s):  
Uong Chon ◽  
Hyun M. Jang ◽  
Sun-Hwa Lee ◽  
Gyu-Chul Yi
Keyword(s):  
Remanent Polarization ◽  
Pyrochlore Phase ◽  
Random Access ◽  
Layered Perovskite ◽  
Oriented Growth ◽  
Plane Orientation ◽  
Amorphous Surface ◽  
Ferroelectric Random Access Memories ◽  
Large Remanent Polarization ◽  
Template Material

Highly c-axis-oriented Bi3.25La0.75Ti3O12 (BLT) films with a homogeneous in-plane orientation were successfully grown on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates by a sol-coating route. The substitution of lanthanum ions for bismuth ions in the layered perovskite suppressed the formation of pyrochlore phase and enhanced the c-axis-oriented growth. The c-axis-oriented BLT film fabricated on a Pt/Ti/SiO2/Si(100) substrate showed fatigue-free characteristics with a large remanent polarization of 26–28 μC/cm2 and the coercive field of 50–75 kV/cm. These features significantly enhance the potential value of the BLT film for the applications to high-density ferroelectric random-access memories devices. In addition, the c-axis-oriented BLT film, with a homogeneous in-plane orientation on an amorphous surface, can be used as a suitable template material for applications to various electro-magneto-optic devices.

Large remanent polarization of 100% polar-axis-oriented epitaxial tetragonal Pb(Zr0.35Ti0.65)O3 thin films

2003 ◽  
Vol 82 (26) ◽  
pp. 4761-4763 ◽  
Author(s):  
Hitoshi Morioka ◽  
Gouji Asano ◽  
Takahiro Oikawa ◽  
Hiroshi Funakubo ◽  
Keisuke Saito
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Polar Axis ◽  
Large Remanent Polarization

Ferroelectric Properties and Microstructures of Tb4O7-Doped Bi4Ti3O12 Thin Films

2010 ◽  
Vol 105-106 ◽  
pp. 259-262 ◽  
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
A.H. Cai ◽  
K.L. Su ◽  
Chong Qing Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Remarkable Improvement

Tb4O7-doped bismuth titanate (BixTbyTi3O12 BTT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the microstructures and ferroelectric properties of the films were investigated. Microstructure studies indicate that all of BTT films with well-developed rod-like grains consist of single phase of a bismuth-layered structure without preferred orientation. The experimental results indicate that Tb doping into Bi4Ti3O12 results in a remarkable improvement in ferroelectric properties. The remanent polarization (Pr) and coercive field (Ec) of the BTT film with y=0.6 were 22 μC/cm2 and 85 kV/cm, respectively.

Large remanent polarization and small leakage in sol–gel derived Bi(Zn1/2Zr1/2)O3–PbTiO3ferroelectric thin films

2013 ◽  
Vol 42 (2) ◽  
pp. 585-590 ◽  
Author(s):  
Linxing Zhang ◽  
Jun Chen ◽  
Hanqing Zhao ◽  
Longlong Fan ◽  
Yangchun Rong ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Large Remanent Polarization

Large remanent polarization of Bi4Ti3O12-based thin films modified by the site engineering technique

2002 ◽  
Vol 92 (3) ◽  
pp. 1518-1521 ◽  
Author(s):  
Takayuki Watanabe ◽  
Takashi Kojima ◽  
Tomohiro Sakai ◽  
Hiroshi Funakubo ◽  
Minoru Osada ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Engineering Technique ◽  
Large Remanent Polarization

Ferroelectric Properties and Microstructures of Pr6O11-Doped Bi4Ti3O12 Thin Films

2010 ◽  
Vol 434-435 ◽  
pp. 281-284
Author(s):  
Min Chen ◽  
A.H. Cai ◽  
X.A. Mei ◽  
K.L. Su ◽  
Chong Qing Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Single Phase ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Large Leakage Current ◽  
Ferroelectric Hysteresis

Pr6O11-doped bismuth titanate (BixPryTi3O12: BPT) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BPT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with y=0.06, 0.3, 1.2 and 1.5, ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with y=0.6 and 0.9, ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT Film with y=0.9 were above 35μC/cm2 and 80KV/cm , respectively. After 3×1010 switching cycles, 20% degradation of 2Pr is observed in the film with y=0.9.

Charge-Compensative Ion Substitution of La3+-Substituted Bismuth Titanate Thin Films for Enhancement of Remanent Polarization

2004 ◽  
Vol 43 (5A) ◽  
pp. 2636-2639 ◽  
Author(s):  
Hiroshi Uchida ◽  
Isao Okada ◽  
Hirofumi Matsuda ◽  
Takashi Iijima ◽  
Takayuki Watanabe ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Ion Substitution
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